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RD12MVP1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon MOSFET Power Transistor - Mitsubishi Electric

भाग संख्या RD12MVP1
समारोह Silicon MOSFET Power Transistor
मैन्युफैक्चरर्स Mitsubishi Electric 
लोगो Mitsubishi Electric लोगो 
पूर्व दर्शन
1 Page
		
<?=RD12MVP1?> डेटा पत्रक पीडीएफ

RD12MVP1 pdf
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD12MVP1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W
TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS.
60 AMBIENT TEMPERATURE
*PCB: Glass epoxy (Size : 46.4 x 40.0mm, t=0.8 mm)
50 Thermal sheet: GELTEC COOH-4000(t=0.5mm)
40
30 On PCB with Termal sheet
and Heat-sink
(Size : 41 x 55mm, t=7.2 mm)
20
10
Vgs-Ids CHARACTERISTICS
7
Ta=+25°C
6 Vds=10V
Ids
5
4
3
2
1
0
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta(deg:C.)
0
0123 456 7
Vgs(V)
Vds-Ids CHARACTERISTICS
9
Ta=+25°C
8
Vgs=7.5V
7
6
5 Vgs=6.5V
4
3
Vgs=5.5V
2
1 Vgs=4.5V
0
01234 56789
Vds(V)
Vds VS. Ciss CHARACTERISTICS
160
140
Ta=+25°C
f=1MHz
120
100
80
60
40
20
0
0 5 10 15
Vds(V)
20
Vds VS. Coss CHARACTERISTICS
160
140
Ta=+25°C
f=1MHz
120
100
80
60
40
20
0
0 5 10 15 20
Vds(V)
Vds VS. Crss CHARACTERISTICS
20
18
Ta=+25°C
f=1MHz
16
14
12
10
8
6
4
2
0
0 5 10 15 20
Vds(V)
RD12MVP1
MITSUBISHI ELECTRIC
2/7
1st Jun. 2006

विन्यास 7 पेज
डाउनलोड[ RD12MVP1 Datasheet.PDF ]


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भाग संख्याविवरणविनिर्माण
RD12MVP1Silicon MOSFET Power TransistorMitsubishi Electric
Mitsubishi Electric


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