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DGS20-025AS डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Gallium Arsenide Schottky Rectifier - IXYS Corporation

भाग संख्या DGS20-025AS
समारोह Gallium Arsenide Schottky Rectifier
मैन्युफैक्चरर्स IXYS Corporation 
लोगो IXYS Corporation लोगो 
पूर्व दर्शन
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<?=DGS20-025AS?> डेटा पत्रक पीडीएफ

DGS20-025AS pdf
DGS 19-025AS DGS 20-025A(S)
DGSK 40-025A(S)
30
10
A
IF
1
300
pF
CJ
100
TVJ =
0,1 125°C
25°C
0,01
0,0 0,5 1,0 1,5 2,0 V 2,5
VF
Fig. 1 typ. forward characteristics
TVJ = 125°C
10
0,1 1 10 100 V 1000
VR
Fig. 2 typ. junction capacity
versus blocking voltage
10
K/W
1
ZthJC
0,1
TO-252
TO-220
Single Pulse
0,01
0,00001
0,0001
0,001
0,01
Fig. 3 typ. thermal impedance junction to case
0,1
DGS 20-022/025A
1s
t
10
Note:
explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium Arsenide
Schottky diodes:
conduction
forward characteristics
turn off characteristics
turn on characteristics
Rectifier Diode
by majority + minority carriers
VF (IF)
extraction of excess carriers
causes temperature dependant
reverse recovery (trr, IRM, Qrr)
delayed saturation leads to VFR
GaAs Schottky Diode
by majority carriers only
VF (IF), see Fig. 1
reverse current charges
junction capacity CJ, see Fig. 2;
not temperature dependant
no turn on overvoltage peak
IXYS reserves the right to change limits, test conditions and dimensions
© 2004 IXYS All rights reserved
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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
DGS20-025A(DGSx0-02xA) Gallium Arsenide Schottky RectifierIXYS Corporation
IXYS Corporation
DGS20-025ASGallium Arsenide Schottky RectifierIXYS Corporation
IXYS Corporation


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