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FDMC2523P डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel QFET - Fairchild Semiconductor

भाग संख्या FDMC2523P
समारोह P-Channel QFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDMC2523P?> डेटा पत्रक पीडीएफ

FDMC2523P pdf
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
'BVDSS
'TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = -250PA, VGS = 0V
ID = -250PA, referenced to 25°C
VDS = -150V, VGS = 0V
TJ= 125°C
VGS = ±30V, VDS = 0V
-150
On Characteristics
VGS(th)
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = -250PA
ID = -250PA, referenced to 25°C
VGS = -10V, ID = -1.5A
VGS = -10V, ID = -1.5A,TJ = 125°C
VDS = -40V, ID = -1.5A ( Note 4)
-3
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = -25V, VGS = 0V,
f = 1MHz
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Gate Charge
Qgd Gate to Drain “Miller”Charge
VDD = -75V, ID = -3A
VGS = -10V, RGS = 25:
(Note 3,4)
VDS= -75V, ID = -3A
VGS = -10V
(Note 3,4)
Typ
-138
-3.8
6
1.1
2.0
1.4
200
60
10
7.5
15
11
19
13
6.2
1.4
3.3
Max Units
V
mV/°C
-1
-10
±100
PA
nA
-5 V
mV/°C
1.5
:
3.6
S
270 pF
80 pF
15 pF
:
27 ns
20 ns
35 ns
24 ns
9 nC
nC
nC
Drain-Source Diode Characteristics
IS Maximum Continuous Drain -Source Diode Forward Current
-3 A
ISM Maximum Pulse Drain -Sourse Diode Forward Current
-12 A
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS =-3A
-1.8 -5
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = -3A, di/dt = 100A/Ps
(Note 3)
93
0.27
ns
nC
Notes:
1: RTJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RTJC is guaranteed by design while RTCA is determined by the user’s board design.
a) 52°C/W when mounted on
a 1 in2 pad of 2 oz copper
b) 108°C/W when mounted
on a minimum pad of 2 oz
coppeer.
Scale 1:1 on letter size paper
2: ISD ˺ -3 A, dl/dt ˺ 300A/us, VDD ˺ BVDSS, Starting TJ = 25 °C
3: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%
4: Essentially independent of operating temperature.
FDMC2523P Rev. B1
2
www.fairchildsemi.com

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