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WSF128K32-xH2x डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 128K x 32 SRAM/FLASH MODULE - White Electronic

भाग संख्या WSF128K32-xH2x
समारोह 128K x 32 SRAM/FLASH MODULE
मैन्युफैक्चरर्स White Electronic 
लोगो White Electronic लोगो 
पूर्व दर्शन
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<?=WSF128K32-xH2x?> डेटा पत्रक पीडीएफ

WSF128K32-xH2x pdf
White Electronic Designs
WSF128K32-XH2X
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol Min Max
Operating Temperature
TA -55 +125
Storage Temperature
TSTG -65 +150
Signal Voltage Relative to GND VG -0.5 7.0
Junction Temperature TJ 150
Supply Voltage
VCC
-0.5
7.0
Unit
°C
°C
V
°C
V
Parameter
Flash Data Retention
10 years
Flash Endurance (write/erase cycles)
10,000
NOTE:
1. Stresses above the absolute maximum rating may cause
permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Symbol Min
Max
VCC
4.5
5.5
VIH 2.2 VCC + 0.3
VIL -0.5 +0.8
Unit
V
V
V
SRAM TRUTH TABLE
SCS
OE SWE
Mode
Data I/O
H X X Standby High Z
L
LH
Read
Data Out
L
HH
Read
High Z
L
XL
Write
Data In
NOTE:
1. FCS must remain high when SCS is low.
Power
Standby
Active
Active
Active
CAPACITANCE
(TA = +25°C)
Test
Symbol
Condition
Max Unit
OE Capacitance
COE VIN = 0V, f = 1.0MHz 80 pF
F/S WE 1-4 Capacitance CWE VIN = 0V, f = 1.0MHz 30 pF
F/S CS Capacitance
CCS VIN = 0V, f = 1.0MHz 50 pF
D0-31 Capacitance
CI/O VIN = 0V, f = 1.0MHz 30 pF
A0 - A16 Capacitance
CAD VIN = 0V, f = 1.0MHz 80 pF
This parameter is guaranteed by design but not tested.
DC CHARACTERISTICS
(VCC = 5.0V, VSS = 0V, TA = -55°C TO +125°C)
Parameter
Input Leakage Current
Output Leakage Current
SRAM Operating Supply Current x 32 Mode
Standby Current
SRAM Output Low Voltage
SRAM Output High Voltage
Flash VCC Active Current for Read (1)
Flash VCC Active Current for Program or
Erase (2)
Flash Output Low Voltage
Flash Output High Voltage
Flash Output High Voltage
Flash Low VCC Lock Out Voltage
Symbol
ILI
ILO
ICCx32
ISB
VOL
VOH
ICC1
ICC2
VOL
VOH1
VOH2
VLKO
Conditions
VCC = 5.5, VIN = GND to VCC
SCS = VIH, OE = VIH, VOUT = GND to VCC
SCS = VIL, OE = FCS = VIH, f = 5MHz, VCC = 5.5
FCS = SCS = VIH, OE = VIH, f = 5MHz, VCC = 5.5
IOL = 8mA, VCC = 4.5
IOH = -4.0mA, VCC = 4.5
FCS = VIL, OE = SCS = VIH
FCS = VIL, OE = SCS = VIH
IOL = 8.0mA, VCC = 4.5
IOH = -2.5 mA, VCC = 4.5
IOH = -100 µA, VCC = 4.5
Min Max Unit
10 µA
10 µA
670 mA
80 mA
0.4 V
2.4 V
220 mA
280 mA
0.85 x VCC
VCC -0.4
3.2
0.45
V
V
V
V
NOTES:
1. The ICC current listed includes both the DC operating current and the frequency dependent component (@ 5 MHz).
The frequency component typically is less than 2 mA/MHz, with OE at VIH.
2. ICC active while Embedded Algorithm (program or erase) is in progress.
3. DC test conditions: VIL = 0.3V, VIH = VCC - 0.3V
White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520
2

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