DataSheet.in

FDMC5614P डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Channel PowerTrench MOSFET - Fairchild Semiconductor

भाग संख्या FDMC5614P
समारोह P-Channel PowerTrench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDMC5614P?> डेटा पत्रक पीडीएफ

FDMC5614P pdf
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage,
VGS = 0V, ID = -250µA
ID = -250µA, referenced to
25°C
VDS = -48V, VGS = 0V
VGS = ±20V, VDS = 0V
On Characteristics (Note 2)
VGS(th)
VGS(th)
TJ
Gate Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain-Source On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = -250µA
ID = -250µA, referenced to
25°C
VGS = -10V, ID = -5.7A
VGS = -4.5V, ID = -4.4A
VGS = -10V, ID = -5.7A
TJ = 125°C
VDS = -15V, ID = -5.7A
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = -30V, VGS = 0V,
f = 1.0MHz
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = -30V, ID = -1A
VGS = -10V, RGEN = 6
VDS = -30V, ID = -5.7A,
VGS = -10V
Drain-Source Diode Characteristics(Note 2)
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS =-3.2A
trr
Qrr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
IF= -3.2A, di/dt=100A/µs
Min Typ Max Units
-60 V
-54 mV/°C
-1
±100
µA
nA
-1 -1.95 -3
V
4.7 mV/°C
84 100
108 135 m
140 168
11 S
792 1055
137 185
57 90
pF
pF
pF
10.3 21
11.3 23
32.2 65
11.0 22
15.3 20
1.6 2.1
2.7 3.5
ns
ns
ns
ns
nC
nC
nC
-0.82
-1.2
36
29
V
ns
nC
Notes:
1:wRhθilJeARisθdJAetiesrmdeinteerdmwinitehdthbeydtehveicuesmero’sunbtoeadrdondaes1iignn2.oz.copper pad on a 1.5x1.5 in board of FR-4 material .RθJC are guaranteed by design
a. 52°C/W when mounted on
a 1 in2 pad of 2 oz, 24°C/W
when power time = 10sec.
b. 108°C/W when mounted on
a minimum pad of 2 oz copper
2: Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDMC5614P Rev. B
2 www.fairchildsemi.com

विन्यास 7 पेज
डाउनलोड[ FDMC5614P Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FDMC5614PP-Channel PowerTrench MOSFETFairchild Semiconductor
Fairchild Semiconductor


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English