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FDMC2674 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel UltraFET Trench MOSFET - Fairchild Semiconductor

भाग संख्या FDMC2674
समारोह N-Channel UltraFET Trench MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=FDMC2674?> डेटा पत्रक पीडीएफ

FDMC2674 pdf
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
ID = 250µA, referenced to
25°C
VDS = 176V, VGS = 0V
VGS = ±20V,
220 V
248 mV/°C
1
±100
µA
nA
On Characteristics (Note 2)
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 250µA, referenced to
25°C
VGS = 10V, ID = 1A
VTJG=S1=5100oCV, ID = 1A,
2 3.4 4
V
-10.2
mV/°C
305 366
678 814 m
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS =100V, VGS = 0V,
f = 1MHz
880 1180
70 95
11 20
pF
pF
pF
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain Charge
VDD = 100V, ID = 1A
VGS = 10V, RGS = 2.4
VDD = 15V, VGS = 10V,
ID = 1A, IG = 1.0mA
9
13
15
21
12.7
3.8
2.9
18
23
27
34
18
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 1A
0.8 1.5
V
trr Reverse Recovery Time
IF = 1A, di/dt = 100A/µs
60 ns
Qrr Reverse Recovery Charge
IF = 1A, di/dt = 100A/µs
109 nC
Notes:
1: RθJA is determined with the device mounted on a 1in2 oz.copper pad on a 1.5x1.5 in board of FR-4 material .RθJC are guaranteed by design while RθJA is
determined by the user’s board design.
a. 52°C/W when mounted on
a 1 in2 pad of 2 oz copper
b. 108°C/W when mounted on
a minimum pad of 2 oz copper
2: Pulse Test:Pulse Width < 300µs, Duty Cycle < 2.0%.
3: Starting TJ = 25°C, L = 3mH, IAS = 3A, VDD = 50V, VGS = 10V.
FDMC2674 Rev. E
2 www.fairchildsemi.com

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डाउनलोड[ FDMC2674 Datasheet.PDF ]


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भाग संख्याविवरणविनिर्माण
FDMC2674N-Channel UltraFET Trench MOSFETFairchild Semiconductor
Fairchild Semiconductor


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