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H10NC60FI डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - STH10NC60FI - ST Microelectronics

भाग संख्या H10NC60FI
समारोह STH10NC60FI
मैन्युफैक्चरर्स ST Microelectronics 
लोगो ST Microelectronics लोगो 
पूर्व दर्शन
1 Page
		
<?=H10NC60FI?> डेटा पत्रक पीडीएफ

H10NC60FI pdf
STW10NC60 / STH10NC60FI
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
TO-247
0.78
ISOWATT218
2.08
30
300
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
www.DataSheet4U.com EAS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
10
820
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
600
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 4.5 A
Min.
2
Typ.
3
0.6
Max.
4
0.75
Unit
V
DYNAMIC
Symbol
gfs (1)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS =20 V , ID = 4.5A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
9
1420
205
35
Max.
Unit
S
pF
pF
pF
2/9

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डाउनलोड[ H10NC60FI Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
H10NC60FISTH10NC60FIST Microelectronics
ST Microelectronics


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