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H11G2 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS - Fairchild Semiconductor

भाग संख्या H11G2
समारोह HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=H11G2?> डेटा पत्रक पीडीएफ

H11G2 pdf
HIGH VOLTAGE
PHOTODARLINGTON OPTOCOUPLERS
H11G1, H11G2, H11G3
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Characteristic
Test Conditions Symbol
EMITTER
Forward Voltage
Forward Voltage Temp.
Coefficient
Reverse Breakdown Voltage
Junction Capacitance
Reverse Leakage Current
DETECTOR
Breakdown Voltage
Collector to Emitter
(IF = 10 mA)
(IR = 10 µA)
(VF = 0 V, f = 1 MHz)
(VF = 1 V, f = 1 MHz)
(VR = 3.0 V)
VF
VF
TA
BVR
CJ
IR
(IC = 1.0 mA, IF = 0) BVCEO
Collector to Base
Emitter to Base
Leakage Current
Collector to Emitter
(IC = 100 µA)
(VCE = 80 V, IF = 0)
(VCE = 60 V, IF = 0)
(VCE = 30 V, IF = 0)
(VCE = 80 V, IF = 0, TA = 80°C)
(VCE = 60 V, IF = 0, TA = 80°C)
BVCBO
BVEBO
ICEO
Device
ALL
ALL
ALL
ALL
ALL
ALL
H11G1
H11G2
H11G3
H11G1
H11G2
H11G3
ALL
H11G1
H11G2
H11G3
H11G1
H11G2
Min
3.0
100
80
55
100
80
55
7
Typ**
1.3
Max
1.50
Unit
V
-1.8 mV/°C
25
50
65
0.001
10
V
pF
pF
µA
V
10
100
nA
100 µA
TRANSFER CHARACTERISTICS
DC Characteristic
Test Conditions Symbol Device Min
Typ**
Max
Unit
EMITTER
Current Transfer Ratio
Collector to Emitter
(IF = 10 mA, VCE = 1 V)
(IF = 1 mA, VCE = 5 V)
CTR
H11G1/2 100 (1000)
H11G1/2 5 (500)
H11G3 2 (200)
mA (%)
Saturation Voltage
(IF = 16 mA, IC = 50 mA)
(IF = 1 mA, IC = 1 mA)
(IF = 20 mA, IC = 50 mA)
H11G1/2
VCE (SAT) H11G1/2
H11G3
0.85 1.0
0.75 1.0
0.85 1.2
V
TRANSFER CHARACTERISTICS
Characteristic
Test Conditions
SWITCHING TIMES
Turn-on Time
(RL = 100 1, IF = 10 mA)
Turn-off Time (VCE = 5 V) Pulse Width 6300 µs, f 630 Hz)
Symbol
ton
toff
Device
ALL
ALL
** All typical values at TA = 25°C
Min
Typ**
5
100
Max
Unit
µs
7/21/00 200045A

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डाउनलोड[ H11G2 Datasheet.PDF ]


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