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H11-A1 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - H11A1 - ETC

भाग संख्या H11-A1
समारोह H11A1
मैन्युफैक्चरर्स ETC 
लोगो ETC लोगो 
पूर्व दर्शन
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H11-A1 pdf
H11A1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1)
Characteristic
Symbol
INPUT LED
wwFowr.wDaartdaSVhoeltaegt4eU(.IcFo=m10 mA,
TA = 25°C)
TA = –55°C
TA = 100°C
VF
Reverse Leakage Current (VR = 3 V)
Capacitance (V = 0 V, f = 1 MHz)
OUTPUT TRANSISTOR
IR
CJ
Collector–Emitter Dark Current (VCE = 10 V)
TA = 25°C
TA = 100°C
ICEO
Collector–Base Dark Current (VCB = 10 V)
TA = 25°C
TA = 100°C
ICBO
Collector–Emitter Breakdown Voltage (IC = 10 mA)
V(BR)CEO
Collector–Base Breakdown Voltage (IC = 100 µA)
V(BR)CBO
Emitter–Collector Breakdown Voltage (IE = 100 µA)
V(BR)ECO
DC Current Gain (IC = 5 mA, VCE = 5 V) (Typical Value)
hFE
Collector–Emitter Capacitance (f = 1 MHz, VCE = 0 V)
CCE
Collector–Base Capacitance (f = 1 MHz, VCB = 0 V)
CCB
Emitter–Base Capacitance (f = 1 MHz, VEB = 0 V)
CEB
COUPLED
Output Collector Current (IF = 10 mA, VCE = 10 V) H11A1
IC (CTR)(2)
Collector–Emitter Saturation Voltage (IC = 0.5 mA, IF = 10 mA)
Turn–On Time (IF = 10 mA, VCC = 10 V, RL = 100 )(3)
Turn–Off Time (IF = 10 mA, VCC = 10 V, RL = 100 )(3)
Rise Time (IF = 10 mA, VCC = 10 V, RL = 100 )(3)
Fall Time (IF = 10 mA, VCC = 10 V, RL = 100 )(3)
Isolation Voltage (f = 60 Hz, t = 1 sec)(4)
Isolation Resistance (V = 500 V)(4)
Isolation Capacitance (V = 0 V, f = 1 MHz)(4)
VCE(sat)
ton
toff
tr
tf
VISO
RISO
CISO
1. Always design to the specified minimum/maximum electrical limits (where applicable).
2. Current Transfer Ratio (CTR) = IC/IF x 100%.
3. For test circuit setup and waveforms, refer to Figure 11.
4. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
Min
30
70
7
5 (50)
7500
1011
Typ(1)
1.15
1.3
1.05
0.01
18
1
1
0.2
100
45
100
7.8
500
7
19
9
12 (120)
0.1
2.8
4.5
1.2
1.3
0.2
Max Unit
1.5 Volts
10 µA
— pF
50 nA
µA
20 nA
— Volts
— Volts
— Volts
——
— pF
— pF
— pF
— mA (%)
0.4 Volts
µs
µs
µs
µs
— Vac(pk)
— pF
2 Motorola Optoelectronics Device Data

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