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IRFP31N50L डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRFP31N50L
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRFP31N50L pdf
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IRFP31N50L
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
500 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.28 ––– V/°C Reference to 25°C, ID = 1mA†
RDS(on)
Static Drain-to-Source On-Resistance ––– 0.15 0.18 VGS = 10V, ID = 19A „
VGS(th)
Gate Threshold Voltage
3.0 ––– 5.0 V VDS = VGS, ID = 250µA
IDSS Drain-to-Source Leakage Current
––– ––– 50
––– ––– 2.0
µA VDS = 500V, VGS = 0V
mA VDS = 400V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100 nA VGS = 30V
––– ––– -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Forward Transconductance
15 ––– ––– S VDS = 50V, ID = 19A „
Total Gate Charge
––– ––– 210
ID = 31A
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
––– ––– 58 nC VDS = 400V
––– ––– 100
VGS = 10V, See Fig. 6 and 13 „
Turn-On Delay Time
––– 28 –––
VDD = 250V
Rise Time
Turn-Off Delay Time
––– 115 ––– ns ID = 31A
––– 54 –––
RG = 4.3
Fall Time
––– 53 –––
VGS = 10V,See Fig. 10 „
Input Capacitance
www.DataSheet4U.comOutput Capacitance
––– 5000 –––
––– 553 –––
VGS = 0V
VDS = 25V
Reverse Transfer Capacitance
––– 59 ––– pF ƒ = 1.0MHz, See Fig. 5
Output Capacitance
––– 6630 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Output Capacitance
Effective Output Capacitance
––– 155 –––
––– 276 –––
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 400V …
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
460
31
46
Units
mJ
A
mJ
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.26
–––
40
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
‚ Starting TJ = 25°C, L = 1mH, RG = 25,
IAS = 31A (See Figure 12a).
ƒ ISD = 31A, di/dt 422A/µs, VDD V(BR)DSS,
TJ 150°C.
2
„ Pulse width 300µs; duty cycle 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
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