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IRFP340 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Power MOSFET - Intersil Corporation

भाग संख्या IRFP340
समारोह N-Channel Power MOSFET
मैन्युफैक्चरर्स Intersil Corporation 
लोगो Intersil Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IRFP340?> डेटा पत्रक पीडीएफ

IRFP340 pdf
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IRFP340
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
IRFP340
400
400
11
6.8
44
±20
150
1.2
480
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
Drain to Source Breakdown Voltage
Gate Threshold Voltage
BVDSS VGS = 0V, ID = 250µA (Figure 10)
VGS(TH) VGS = VDS, ID = 250µA
400 -
2.0 -
Zero-Gate Voltage Drain Current
IDSS VDS = Rated BVDSS, VGS = 0V
--
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC - -
On-State Drain Current (Note 2)
www.DataSheet4U.comGate to Source Leakage
ID(ON)
IGSS
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
VGS = ±20V
11 -
--
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
rDS(ON)
gfs
td(ON)
tr
td(OFF)
VGS = 10V, ID = 5.5A (Figures 8, 9)
VDS 50V, ID = 5.5A (Figure 12)
VDD = 200V, ID 11A, RGS = 9.1, RL = 17.4
MOSFET Switching Times are Essentially
Independent of Operating Temperature
- 0.47
6.1 9.1
- 14
- 27
- 50
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
tf
Qg(TOT)
Qgs
VGS = 10V, ID = 10A, VDS = 0.8 x Rated BVDSS,
Ig(REF) = 1.5mA (Figure 14) Gate Charge is
Essentially Independent of Operating Temperature
- 24
- 41
- 6.0
Gate to Drain “Miller” Charge
Input Capacitance
Qgd
CISS
VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)
- 23
- 1250
Output Capacitance
Reverse-Transfer Capacitance
COSS
CRSS
- 300
- 80
Internal Drain Inductance
Internal Source Inductance
LD Measured from the Drain Modified MOSFET
Lead, 6mm (0.25in) from the Symbol Showing the
Package to the Center of the Internal Devices
Die Inductances
LS Measured from the Source
Lead, 6mm (0.25in) from
Header to the Source
D
LD
Bonding Pad
G
LS
- 5.0
- 12.5
S
Junction to Case
Junction to Ambient
RθJC
RθJA
Free Air Operation
--
--
MAX
-
4.0
25
250
-
±100
0.55
-
21
41
75
36
63
-
-
-
-
-
-
-
0.83
30
UNITS
V
V
µA
µA
A
nA
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
nH
oC/W
oC/W
4-330
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