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IRFP3415 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRFP3415
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRFP3415 pdf
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IRFP3415
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
150 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.17 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.042 VGS = 10V, ID = 22A „
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
2.0 ––– 4.0
19 ––– –––
V VDS = VGS, ID = 250µA
S VDS = 50V, ID = 22A
IDSS Drain-to-Source Leakage Current
––– ––– 25
––– ––– 250
µA VDS = 150V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 150°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
Qg
Qgs
Qgd
td(on)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
––– ––– 200
––– ––– 17
––– ––– 98
––– 12 –––
ID = 22A
nC VDS = 120V
VGS = 10V, See Fig. 6 and 13 „
VDD = 75V
tr
td(off)
Rise Time
Turn-Off Delay Time
––– 55 ––– ns ID = 22A
––– 71 –––
RG = 2.5
tf Fall Time
––– 69 –––
RD = 3.3Ω, See Fig. 10 „
Between lead,
D
LD InternalDrainInductance
––– 4.5 –––
6mm (0.25in.)
www.DataSheet4U.comLS Internal Source Inductance
––– 7.5 –––
nH
from package
and center of die contact
G
S
Ciss Input Capacitance
––– 2400 –––
VGS = 0V
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
––– 640 ––– pF VDS = 25V
––– 340 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ. Max.
––– 43
––– 150
––– 1.3
260 390
2.2 3.3
Units
A
V
ns
µC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 22A, VGS = 0V „
TJ = 25°C, IF = 22A
di/dt = 100A/µs „
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 2.4mH
RG = 25, IAS = 22A. (See Figure 12)
ƒ ISD 22A, di/dt 820A/µs, VDD V(BR)DSS,
TJ 175°C
„ Pulse width 300µs; duty cycle 2%.
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