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IRFP350 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Power MOSFET - Intersil Corporation

भाग संख्या IRFP350
समारोह N-Channel Power MOSFET
मैन्युफैक्चरर्स Intersil Corporation 
लोगो Intersil Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IRFP350?> डेटा पत्रक पीडीएफ

IRFP350 pdf
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IRFP350
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
IRFP350
400
400
16
10
64
±20
180
1.44
700
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
Drain to Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250µA (Figure 10)
400 -
Gate to Threshold Voltage
VGS(TH) VGS = VDS, ID = 250µA
2.0 -
Zero-Gate Voltage Drain Current
IDSS VDS = Rated BVDSS, VGS = 0V
--
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC - -
On-State Drain Current (Note 2)
www.DataSheet4U.comGate to Source Leakage Current
ID(ON)
IGSS
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7)
VGS = ±20V
16 -
--
Drain to Source On Resistance (Note 2) rDS(ON) VGS = 10V, ID = 8.9A (Figures 8, 9)
- 0.250
Forward Transconductance (Note 2)
gfs VDS = 2 x VGS, ID = 8.0A (Figure 12)
8.0 10
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
tD(ON)
tr
tD(OFF)
VDD = 200V, ID = 16A, RGS = 6.2, VGS = 10V,
RL = 12.3
MOSFET Switching Times are Essentially
Independent of Operating Temperature
- 12
- 51
- 75
Fall Time
tf
- 47
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Qg VGS = 10V, ID = 16A, VDS = 0.8 x Rated BVDSS.
-
IG(REF) = 1.5mA (Figure 14)
Qgs
Gate Charge is Essentially Independent of Operating
Temperature
-
Qgd -
87
10
33
Input Capacitance
CISS VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)
- 2000
Output Capacitance
COSS
- 400
Reverse-Transfer Capacitance
CRSS
- 100
Internal Drain Inductance
LD Measured Between the Modified MOSFET
Contact Screw on Header Symbol Showing the
that is Closer to Source Internal Devices
and Gate Pins and Center Inductances
of Die
D
- 5.0
Internal Source Inductance
LS Measured from the
Source Lead, 6mm
(0.25in) From Header to
Source Bonding Pad
G
LD
LS
- 12.5
MAX
-
4.0
25
250
-
±100
0.300
-
18
77
110
71
130
-
-
-
-
-
-
-
UNITS
V
V
µA
µA
A
nA
S
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
nH
nH
Junction to Case
Junction to Ambient
RθJC
RθJA
Free Air Operation
S
- - 0.70 oC/W
- - 30 oC/W
4-336
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