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IRFP350A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Advanced Power MOSFET - Fairchild Semiconductor

भाग संख्या IRFP350A
समारोह Advanced Power MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
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<?=IRFP350A?> डेटा पत्रक पीडीएफ

IRFP350A pdf
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IRFP350A
1&+$11(/
32:(5 026)(7
Electrical Characteristics (TC=25°C unless otherwise specified)
Symbol
Characteristic
Min. Typ. Max. Units
Test Condition
BVDSS
BV/TJ
VGS(th)
IGSS
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
400 -- -- V
-- 0.46 -- V/°C
2.0 -- 4.0 V
-- -- 100 nA
-- -- -100
-- -- 10
-- -- 100 µA
VGS=0V,ID=250µA
ID=250µA See Fig 7
VDS=5V,ID=250µA
VGS=30V
VGS=-30V
VDS=400V
VDS=320V,TC=125°C
Static Drain-Source
RDS(on) On-State Resistance
-- -- 0.3 VGS=10V,ID=8.5A
(4)
gfs Forward Transconductance
-- 11.65 --
VDS=50V,ID=8.5A
(4)
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
-- 2140 2780
-- 305 350 pF VGS=0V,VDS=25V,f =1MHz
See Fig 5
-- 134 155
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 20 50
-- 22 55
VDD=200V,ID=17A,
-- 100 210 ns RG=6.2
See Fig 13 (4) (5)
-- 32 75
Qg Total Gate Charge
-- 101 131
VDS=320V,VGS=10V,
Qgs Gate-Source Charge
-- 14 -- nC ID=17A
Qgd Gate-Drain ( Miller ) Charge
-- 51.5 --
See Fig 6 & Fig 12 (4) (5)
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Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
(1) --
-- 17
-- 68
Integral reverse pn-diode
A
in the MOSFET
(4) -- -- 1.5 V TJ=25°C,IS=17A,VGS=0V
-- 385 -- ns TJ=25°C,IF=17A
-- 4.85 -- µC diF/dt=100A/µs
(4)
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=7mH, IAS=17A, VDD=50V, RG=27, Starting TJ =25°C
(3) ISD 17A, di/dt 250A/µs, VDD BVDSS , Starting TJ =25°C
(4) Pulse Test: Pulse Width = 250µs, Duty Cycle 2%
(5) Essentially Independent of Operating Temperature
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