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IRFP350LC डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRFP350LC
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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IRFP350LC
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
400 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
––– 0.49 ––– V/°C Reference to 25°C, I D = 1mA
––– ––– 0.30 VGS = 10V, ID = 9.6A
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance
IDSS Drain-to-Source Leakage Current
8.1 ––– ––– S VDS = 50V, ID = 9.6A
––– ––– 25 µA VDS = 400V, VGS = 0V
––– ––– 250
VDS = 320V, VGS = 0V, TJ = 125°C
IGSS
Qg
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
––– ––– 100
––– ––– -100
––– ––– 76
nA
VGS = 20V
VGS = -20V
ID = 16A
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
––– ––– 20
––– ––– 37
nC VDS = 320V
VGS = 10V, See Fig. 6 and 13
td(on)
Turn-On Delay Time
––– 14 –––
VDD = 200V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
––– 54 ––– ns ID = 16A
––– 33 –––
RG = 6.2
––– 35 –––
RD = 12Ω, See Fig. 10
Between lead,
LD Internal Drain Inductance
––– 5.0 –––
nH 6mm (0.25in.)
from package
LS Internal Source Inductance
www.DataSheet4U.comCiss Input Capacitance
––– 13 –––
––– 2200 –––
and center of die contact
VGS = 0V
Coss
Output Capacitance
––– 390 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance
––– 31 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 16
showing the
A
integral reverse
––– ––– 64
p-n junction diode.
––– ––– 1.6 V TJ = 25°C, I S = 16A, VGS = 0V
––– 440 660 ns TJ = 25°C, I F = 16A
––– 4.1 6.2 µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L S+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting T J = 25°C, L = 2.7mH
RG = 25, IAS = 16A. (See Figure 12)
ISD 16A, di/dt 200A/µs, V DD V(BR)DSS,
TJ 150°C
Pulse width 300µs; duty cycle 2%.
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