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VN90AB डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Ebhancement Mode MOS Transistor - Siliconix

भाग संख्या VN90AB
समारोह N-Channel Ebhancement Mode MOS Transistor
मैन्युफैक्चरर्स Siliconix 
लोगो Siliconix लोगो 
पूर्व दर्शन
1 Page
		
<?=VN90AB?> डेटा पत्रक पीडीएफ

VN90AB pdf
VN90AB
ELECTRICAL CHARACTERISTICS1
PARAMETER
STATIC
Drain-Source
Breakdown Voltage
Gate Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage
Drain Current
On-State Drain
Current 3
Drain-Source
On-Reslstance3
~~~;6~nductance 3
Common Source
Output Conductance3
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
SWITCHING
Turn-On Delay Time
Turn-Off Delay Time
SYMBOL
TEST CONDITIONS
TYp2
V(BR)OSS
VGS(th)
IGSS
loss
10(ON)
rOS(ON)
gFS
gos
VGs =OV,l o =10jJ.A
Vos = VGS, 10 = 1 mA
Vos = 0 V
VGS = ±15
I To = 125°C
IVos = 90 V
IVGS = 0 V
Vos = 72 V, To = 125°C
Vos = 10 V, VGS = 10 V
VGS = 5 V, 10 = 0.3A
VGS = 10 V
10 = 1 A
I 4To = 125°C
VOS = 10 V, 10 = 0.5 A
120
1.6
±1
±5
0.03
0.30
1.8
4.2
3.6
6.8
350
300
C lss
Coss
C rss
Vos = 25 V
VGS = a V
f = 1 MHz
35
15
2
tON
t OFF
Voo = 25 V, R L = 23 .0.
10 = 1 A, VGEN= 0 to 10 V
RG= 25.0.
(Switching time Is essentially Independent of
operating temperature)
6
8
NOTES: 1. To = 25 ° C unless otherwise noted.
2. For design aid only, not subject to production testing.
3. Pulse test; PW =300jJ.s, duty cycle :!:2%.
4. This parameter has been revised from previous datasheet.
~Siliconix
~ incorpora.ted
LIMITS
VN90AB
MIN MAX UNIT
90
V
0.8 2
±100
+500
10
500
nA
jJ.A
1.5 A
5.3
5 .0.
10
170 mS
jJ.S
50
40 pF
10
10
ns
10
6-62

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डाउनलोड[ VN90AB Datasheet.PDF ]


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