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W8NB90 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - STW8NB90 - ST Microelectronics

भाग संख्या W8NB90
समारोह STW8NB90
मैन्युफैक्चरर्स ST Microelectronics 
लोगो ST Microelectronics लोगो 
पूर्व दर्शन
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<?=W8NB90?> डेटा पत्रक पीडीएफ

W8NB90 pdf
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STW8NB90 - STH8NB90FI
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
TO-247
0.625
ISOWATT218
1.56
30
300
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
8
700
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
900
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 4 A
Min.
3
Typ.
4
1.1
Max.
5
1.45
Unit
V
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 4 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
8
2120
225
23
Max.
Unit
S
pF
pF
pF
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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
W8NB90 STW8NB90ST Microelectronics
ST Microelectronics


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