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HAT3010R डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon N/P Channel Power MOSFET - Hitachi

भाग संख्या HAT3010R
समारोह Silicon N/P Channel Power MOSFET
मैन्युफैक्चरर्स Hitachi 
लोगो Hitachi लोगो 
पूर्व दर्शन
1 Page
		
<?=HAT3010R?> डेटा पत्रक पीडीएफ

HAT3010R pdf
HAT3010R
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Nch Pch
Drain to source voltage
VDSS
60
–60 V
Gate to source voltage
VGSS
±20 ±20 V
Drain current
Drain peak current
ID
I Note1
D(pulse)
6
48
–5 A
–40 A
Body-drain diode
IDR
6
–5 A
reverse drain current
Channel dissipation
Pch Note2
2
2
W
Channel dissipation
Pch Note3
3
3
W
Channel temperature
Tch
150 150 °C
Storage temperature
Tstg
–55 to +150
–55 to +150
°C
Notes: 1. PW 10µs, duty cycle 1 %
2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s
3. 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s
Rev.6, Feb. 2002, page 2 of 14

विन्यास 14 पेज
डाउनलोड[ HAT3010R Datasheet.PDF ]


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