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2N60B डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - SSW2N60B - Fairchild Semiconductor

भाग संख्या 2N60B
समारोह SSW2N60B
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=2N60B?> डेटा पत्रक पीडीएफ

2N60B pdf
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Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
/ TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
600 --
ID = 250 µA, Referenced to 25°C -- 0.65
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
-- --
-- --
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
-- --
-- --
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
2.0 --
VGS = 10 V, ID = 1.0 A
-- 3.8
VDS = 40 V, ID = 1.0 A (Note 4) -- 2.05
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 380
-- 35
-- 7.6
Switching Characteristics
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD = 300 V, ID = 2.0 A,
RG = 25
(Note 4, 5)
VDS = 480 V, ID = 2.0 A,
VGS = 10 V
(Note 4, 5)
--
--
--
--
--
--
--
16
50
40
40
12.5
2.2
5.4
--
--
10
100
100
-100
4.0
5.0
--
490
46
9.9
40
110
90
90
17
--
--
V
V/°C
µA
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
-- -- 2.0
ISM Maximum Pulsed Drain-Source Diode Forward Current
-- -- 6.0
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.0 A
-- -- 1.4
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 2.0 A,
-- 250
dIF / dt = 100 A/µs
(Note 4) -- 1.31
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 55mH, IAS = 2.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 2.0A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
A
A
V
ns
µC
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001

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