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P7NC80ZF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - STP7NC80Z - ST Microelectronics

भाग संख्या P7NC80ZF
समारोह STP7NC80Z
मैन्युफैक्चरर्स ST Microelectronics 
लोगो ST Microelectronics लोगो 
पूर्व दर्शन
1 Page
		
<?=P7NC80ZF?> डेटा पत्रक पीडीएफ

P7NC80ZF pdf
STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
IGS Gate-source Current
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt
Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max.Operating Junction Temperature
( ) Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
Value
STP7NC80Z
STB7NC80Z
STB7NC80Z-1
STP7NC80ZFP
800
800
±25
6.5 6.5 (*)
4 4(*)
26 26 (*)
135 40
1.08 0.32
±50
3
3
-- 2000
-65 to 150
150
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
TO-220 / D2PAK /
I2PAK
0.93
30
300
TO-220FP
3.13
Unit
V
V
V
A
A
A
W
W/°C
mA
KV
V/ns
V
°C
°C
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
6.5
290
Unit
A
mJ
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
αT Voltage Thermal Coefficient
Rz Dynamic Resistance
Test Conditions
Igs=± 1mA (Open Drain)
T=25°C Note(3)
ID = 20 mA,
Min.
25
Typ.
1.3
90
Max.
Unit
V
10-4/°C
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/13

विन्यास 13 पेज
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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
P7NC80ZFSTP7NC80ZST Microelectronics
ST Microelectronics


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