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UP04314 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon NPN epitaxial planar type (Tr1) / Silicon PNP epitaxial planar type (Tr2) - Panasonic Semiconductor

भाग संख्या UP04314
समारोह Silicon NPN epitaxial planar type (Tr1) / Silicon PNP epitaxial planar type (Tr2)
मैन्युफैक्चरर्स Panasonic Semiconductor 
लोगो Panasonic Semiconductor लोगो 
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UP04314 pdf
UP04314
Electrical Characteristics Ta = 25°C ± 3°C
Tr1
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
50
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0
50
Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0
0.1
Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0
0.5
Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0
0.2
Forward current transfer ratio
hFE VCE = 10 V, IC = 5 mA
80
Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 0.3 mA
0.25
Output voltage high-level
VOH VCC = 5 V, VB = 0.5 V, RL = 1 k
4.9
Output voltage low-level
VOL VCC = 5 V, VB = 2.5 V, RL = 1 k
0.2
Input resistance
R1
30% 10 +30%
Resistance ratio
R1 / R2
0.17 0.21 0.25
Transition frequency
fT VCB = 10 V, IE = −2 mA, f = 200 MHz
150
V
V
µA
µA
mA
V
V
V
k
MHz
Tr2
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
VCBO
VCEO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VOH
VOL
R1
R1 / R2
fT
IC = −10 µA, IE = 0
IC = −2 mA, IB = 0
VCB = −50 V, IE = 0
VCE = −50 V, IB = 0
VEB = −6 V, IC = 0
VCE = −10 V, IC = −5 mA
IC = −10 mA, IB = − 0.3 mA
VCC = −5 V, VB = − 0.5 V, RL = 1 k
VCC = −5 V, VB = −2.5 V, RL = 1 k
VCB = −10 V, IE = 1 mA, f = 200 MHz
50
50
80
4.9
30%
0.17
0.1
0.5
0.2
0.25
0.2
10 +30%
0.21 0.25
80
V
V
µA
µA
mA
V
V
V
k
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
PT Ta
150
125
100
75
50
25
0
0 40 80 120 160
Ambient temperature Ta (°C)
2
SJJ00240BED

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
UP04314Silicon NPN epitaxial planar type (Tr1) / Silicon PNP epitaxial planar type (Tr2)Panasonic Semiconductor
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