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M12JZ47 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - SM12JZ47 - Toshiba Semiconductor

भाग संख्या M12JZ47
समारोह SM12JZ47
मैन्युफैक्चरर्स Toshiba Semiconductor 
लोगो Toshiba Semiconductor लोगो 
पूर्व दर्शन
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M12JZ47 pdf
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SM12GZ47,SM12JZ47,SM12GZ47A,SM12JZ47A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak OffState Current
I
Gate Trigger Voltage
II
III
IV
I
SM12GZ47
SM12JZ47
II
III
Gate Trigger
Current
IV
I
SM12GZ47A
SM12JZ47A
II
III
IV
Peak OnState Voltage
Gate NonTrigger Voltage
Holding Current
Thermal Resistance
Critical Rate of
Rise of OffState
Voltage
SM12GZ47
SM12JZ47
SM12GZ47A
SM12JZ47A
Critical Rate of
Rise of OffState
Voltage at
Commutation
SM12GZ47
SM12JZ47
SM12GZ47A
SM12JZ47A
SYMBOL
TEST CONDITION
MIN TYP. MAX UNIT
IDRM
VDRM = Rated
― ― 20 µA
T2 (+) , Gate (+) ― ― 1.5
VGT
VD = 12V,
RL = 20
T2 (+) , Gate () ― ― 1.5
V
T2 () , Gate () ― ― 1.5
T2 () , Gate (+) ― ― ―
T2 (+) , Gate (+) ― ― 30
T2 (+) , Gate () ― ― 30
T2 () , Gate () ― ― 30
IGT
VD = 12V,
RL = 20
T2 () , Gate (+) ― ― ―
mA
T2 (+) , Gate (+) ― ― 20
T2 (+) , Gate () ― ― 20
T2 () , Gate () ― ― 20
T2 () , Gate (+) ― ― ―
VTM
VGD
IH
Rth (jc)
ITM = 17A
VD = Rated, Tc = 125°C
VD = 12V, ITM = 1A
Junction to Case, AC
― ― 1.5 V
0.2 ― ― V
― ― 50 mA
― ― 3.0 °C / W
dv / dt
VDRM = Rated, Tj = 125°C
Exponential Rise
300
V / µs
200
(dv / dt) c
VDRM = 400V, Tj = 125°C
(di / dt) c = 6.5A / ms
10 ― ―
V / µs
4 ――
MARKING
*NUMBER
SYMBOL
*1 TOSHIBA PRODUCT MARK
SM12GZ47, SM12GZ47A
*2
TYPE
SM12JZ47, SM12JZ47A
*3 SM12GZ47A, SM12JZ47A
MARK
M12GZ47
M12JZ47
A
Example
*4
8A: January 1998
8B: February 1998
8L: December 1998
2 2001-07-10

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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
M12JZ47SM12JZ47Toshiba Semiconductor
Toshiba Semiconductor


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