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9018 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN Epitaxial Planar Transistor - Unisonic Technologies

भाग संख्या 9018
समारोह NPN Epitaxial Planar Transistor
मैन्युफैक्चरर्स Unisonic Technologies 
लोगो Unisonic Technologies लोगो 
पूर्व दर्शन
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9018 pdf
9018
NPN EPITAXIAL PLANAR TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEO
15
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC 50 mA
Collector Power Dissipation
Pc 400 mW
Junction Temperature
Operating Temperature
Storage Temperature
TJ
TOPR
TSTG
125
-20 ~ +85
-40 ~ +150
C
C
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector-Emitter Saturation Voltage
DC Current Gain
Current Gain Bandwidth Product
Output Capacitance
CLASSIFICATION of hFE
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
VCE(SAT)
hFE
fT
COB
TEST CONDITIONS
IC=100uA, IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCB=12V, IE=0
IC=10mA, IB=1mA
VCE=5V, IC=1mA
VCE=5V, IC=5mA
VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
30 V
15 V
5V
50 nA
0.5 V
28 100 198
700 1100
MHz
1.3 1.7 pF
RANK
RANGE
D
28-45
E
39-60
F
54-80
G
72-108
H
97-146
I
132-198
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R201-025.C

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