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FJP5555 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - NPN Silicon Transistor - Fairchild Semiconductor

भाग संख्या FJP5555
समारोह NPN Silicon Transistor
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FJP5555?> डेटा पत्रक पीडीएफ

FJP5555 pdf
Electrical Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
BVCBO
BVCEO
BVEBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
hFE DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
Cob Output Capacitance
tON
tSTG
tF
tON
tSTG
tF
EAS
Note:
Turn-On Time
Storage Time
Fall Time
Turn-On Time
Storage Time
Fall Time
Avalanche Energy
3. Pulse test: pulse width 300 μs, duty cycle 2%.
Conditions
IC = 500 μA, IE = 0
IC = 5 mA, IB = 0
IE = 500 μA, IC = 0
VCE = 5 V, IC = 10 mA
VCE = 3 V, IC = 0.8 A
IC = 1 A, IB = 0.2 A
IC = 3.5 A, IB = 1.0 A
IC = 3.5 A, IB = 1.0 A
VCB = 10 V, f = 1 MHz
VCC = 125 V, IC = 0.5 A,
IB1 = 45 mA, IB2 = 0.5 A,
RL = 250 Ω
VCC = 250 V, IC = 2.5 A,
IB1 = 0.5 A, IB2 = 1.0 A,
RL = 100 Ω
L = 2 mH
Min.
1050
400
14
10
20
6
Typ.
45
Max.
Units
V
V
V
40
0.5 V
1.5 V
1.2 V
pF
1.0 μs
1.2 μs
0.3 μs
2.0 μs
2.5 μs
0.3 μs
mJ
© 2008 Fairchild Semiconductor Corporation
Rev. 1.2.0
2
www.fairchildsemi.com

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डाउनलोड[ FJP5555 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
FJP5555NPN Silicon TransistorFairchild Semiconductor
Fairchild Semiconductor


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