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FQD3N50C डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 500V N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या FQD3N50C
समारोह 500V N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
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<?=FQD3N50C?> डेटा पत्रक पीडीएफ

FQD3N50C pdf
Package Marking and Ordering Information
Device Marking
FQD3N50C
FQD3N50C
FQU3N50C
Device
FQD3N50CTM
FQD3N50CTF
FQU3N50C
Package
D-PAK
D-PAK
I-PAK
Reel Size
380mm
380mm
-
Tape Width
16mm
16mm
-
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Off Characteristics
BVDSS
BVDSS/
TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
500
--
--
--
--
--
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 1.25 A
VDS = 40 V, ID = 1.25 A
2.0
--
(Note 4)
--
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
VDD = 250 V, ID = 2.5 A,
RG = 25
VDS = 400 V, ID = 2.5 A,
VGS = 10 V
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
--
0.7
--
--
--
--
--
2.1
1.5
280
50
8.5
10
25
35
25
10
1.5
5.5
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 2.5 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 3 A,
dIF / dt = 100 A/µs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 58mH, IAS = 2.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 2.5A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
(Note 4)
--
--
--
--
--
--
--
--
170
0.7
Quantity
2500
2500
70
Max.
Units
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
4.0 V
2.5
-- S
365 pF
65 pF
11 pF
30 ns
60 ns
80 ns
60 ns
13 nC
-- nC
-- nC
2.5 A
10 A
1.4 V
-- ns
-- µC
FQD3N50C/FQU3N50C Rev. A
2
www.fairchildsemi.com

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डाउनलोड[ FQD3N50C Datasheet.PDF ]


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