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IRFP2410 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Fourth Generation HEXFETs - International Rectifier

भाग संख्या IRFP2410
समारोह Fourth Generation HEXFETs
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRFP2410?> डेटा पत्रक पीडीएफ

IRFP2410 pdf
IRFP2410
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
gfs Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
100 ––– ––– V VGS = 0V, ID = 250µA
––– 0.11 ––– V/°C Reference to 25°C, I D = 1mA
––– ––– 0.025 VGS = 10V, ID = 37A
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
16 ––– ––– S VDS = 25V, ID = 37A
––– ––– 25 µA VDS = 100V, VGS = 0V
––– ––– 250
VDS = 80V, VGS = 0V, TJ = 150°C
––– ––– 100
nA
––– ––– -100
VGS = 20V
VGS = -20V
––– ––– 180
ID = 37A
––– ––– 30 nC VDS = 80V
––– ––– 69
VGS = 10V, See Fig. 6 and 13
––– 16 –––
VDD = 50V
––– 100 ––– ns ID = 37A
––– 120 –––
RG = 6.2
––– 97 –––
RD = 1.3Ω, See Fig. 10
Between lead,
––– 5.0 –––
nH 6mm (0.25in.)
from package
––– 13 –––
and center of die contact
––– 4600 –––
VGS = 0V
––– 1100 --–– pF VDS = 25V
––– 200 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 61
showing the
A
integral reverse
––– ––– 240
p-n junction diode.
––– ––– 2.5 V TJ = 25°C, I S = 37A, VGS = 0V
––– 180 270 ns TJ = 25°C, I F = 37A
––– 990 1500 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L S+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting T J = 25°C, L = 270µH
RG = 25, IAS = 37A. (See Figure 12)
ISD 37A, di/dt 200A/µs, V DD V(BR)DSS,
TJ 175°C
Pulse width 300µs; duty cycle 2%.

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डाउनलोड[ IRFP2410 Datasheet.PDF ]


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