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IRFP246 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - (IRFP244 / IRFP245 / IRFP246 / IRFP247) N-Channel Power MOSFETs - Intersil Corporation

भाग संख्या IRFP246
समारोह (IRFP244 / IRFP245 / IRFP246 / IRFP247) N-Channel Power MOSFETs
मैन्युफैक्चरर्स Intersil Corporation 
लोगो Intersil Corporation लोगो 
पूर्व दर्शन
1 Page
		
<?=IRFP246?> डेटा पत्रक पीडीएफ

IRFP246 pdf
IRFP244, IRFP245, IRFP246, IRFP247
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRFP244
IRFP245
IRFP246
IRFP247 UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . VDS
250
250
275
275 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . .VDGR
250
250
275
275 V
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
15
14
15
14 A
TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
9.7
8.8
9.7
8.8 A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . IDM
60
56
60
56 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
±20
±20
±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . PD
150
150
150
150 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.2
1.2
1.2
1.2 W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . Tpkg
550
-55 to 150
300
260
550
-55 to 150
300
260
550
-55 to 150
300
260
550
-55 to 150
300
260
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
IRFP244, IRFP245
BVDSS VGS = 0V, ID = 250µA (Figure 10)
250 - - V
IRFP246, IRFP247
275 - - V
Gate to Threshold Voltage
Zero-Gate Voltage Drain Current
On-State Drain Current (Note 2)
IRFP244, IRFP246
VGS(TH)
IDSS
ID(ON)
VGS = VDS, ID = 250µA
VDS = Rated BVDSS, VGS = 0V
VDS
TJ =
= 0.8 x
125oC
Rated
BVDSS
,
VGS
=
0V
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
(Figure 7)
2.0 - 4.0 V
- - 25 µA
- - 250 µA
15 - - A
IRFP245, IRFP247
14 - - A
Gate to Source Leakage
Drain to Source On Resistance (Note 2)
IRFP244, IRFP246
IGSS
rDS(ON)
VGS = ±20V
VGS = 10V, ID = 10A (Figures 8, 9)
- - ±100 nA
- 0.20 0.28
IRFP245, IRFP247
- 0.24 0.34
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
gfs VDS 50V, ID = 10A (Figure 12)
6.7 11
-
td(ON)
tr
td(OFF)
VDD = 125V, ID 15A, RG = 9.1, VGS = 10V,
RL = 8(Figures 17, 18) MOSFET Switching
Times are Essentially Independent of
Operating Temperature
-
-
-
16 24
67 100
53 80
tf - 49 74
Qg(TOT)
Qgs
VGS = 10V, ID = 15A, VDS = 0.8 x Rated
BVDSS, IG(REF) = 1.5mA (Figures 14, 19, 20)
Gate charge is Essentially Independent of
Operating Temperature
-
-
39 59
6.6 -
Qgd - 20 -
S
ns
ns
ns
ns
nC
nC
nC
5-2

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