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CJF6668 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - PNP Silicon Planar Darlington Power Transistor - CDIL

भाग संख्या CJF6668
समारोह PNP Silicon Planar Darlington Power Transistor
मैन्युफैक्चरर्स CDIL 
लोगो CDIL लोगो 
पूर्व दर्शन
1 Page
		
<?=CJF6668?> डेटा पत्रक पीडीएफ

CJF6668 pdf
PNP SILICON PLANAR DARLINGTON POWER TRANSISTOR
CJF6668
TO-220FP Fully Isolated
Plastic Package
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter sustaining Voltage
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Base Emitter on Voltage
VCEO (sus) *
ICEO
ICEX
IC=30mA, IB=0
VCE=80V, IB=0
VCE=100V, VEB(off)=1.5V
ICBO
IEBO
hFE *
VCE(Sat) *
VBE(Sat) *
VBE(on) *
TC=125ºC
VCE=100V, VEB(off)=1.5V
VCB=100V, IE=0
VEB=5V, IC=0
IC=3A, VCE=4V
IC=5A, VCE=3V
IC=8A, VCE=4V
IC=10A, VCE=3V
IC=3A, IB=6mA
IC=5A, IB=0.01A
IC=8A, IB=80mA
IC=10A, IB=0.1A
IC=5A, IB=0.01A
IC=10A, IB=0.1A
IC=8A, VCE=4V
DYNAMIC CHARACTERISTICS
Small Signal Current Gain
Output Capacitance
Small Signal Current Gain
IhfeI
Cob
hfe
* Pulse Test: Pulse Width <300µs, Duty Cycle <2 %
IC=1A, VCE=5V, f=1MHz
VCB=10V, IE=0, f=1MHz
IC=1A,VCE=5V, f=1kHz
MIN MAX
100
10
10
UNIT
V
µA
µA
3000
1000
200
100
3
10
2
15000
2
2
2.5
3
2.8
4.5
2.5
mA
µA
mA
V
V
V
V
V
V
V
20
1000
300
pF
Continental Device India Limited
Data Sheet
Page 2 of 4

विन्यास 4 पेज
डाउनलोड[ CJF6668 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
CJF6668PNP Silicon Planar Darlington Power TransistorCDIL
CDIL


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