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IRFP250 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL MOSFET0 - ST Microelectronics

भाग संख्या IRFP250
समारोह N-CHANNEL MOSFET0
मैन्युफैक्चरर्स ST Microelectronics 
लोगो ST Microelectronics लोगो 
पूर्व दर्शन
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<?=IRFP250?> डेटा पत्रक पीडीएफ

IRFP250 pdf
IRFP250
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Rthc-sink Thermal Resistance Case-sink Typ
Tl Maximum Lead Temperature For Soldering Purpose
0.66
30
0.1
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
33
600
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
200
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
°C/W
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
Test Conditions
VDS = VGS, ID = 250 µA
VGS = 10V, ID = 16A
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min.
2
Typ.
3
0.073
Max.
4
0.085
Unit
V
33 A
DYNAMIC
Symbol
gfs
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 16A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
10
Typ.
25
2850
420
120
Max.
Unit
S
pF
pF
pF
2/8

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डाउनलोड[ IRFP250 Datasheet.PDF ]


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