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TBB1002 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier - HITACHI

भाग संख्या TBB1002
समारोह Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
मैन्युफैक्चरर्स HITACHI 
लोगो HITACHI लोगो 
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TBB1002 pdf
TBB1002
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
Gate1 to source voltage
VDS
VG1S
6
+6
-0
Gate2 to source voltage
VG2S
+6
-0
Drain current
Channel power dissipation
ID
Pch*3
30
250
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 3. Value on the glass epoxy board (49mm × 38mm × 1mm).
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
The below specification are applicable for UHF unit (FET1)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS
6
Gate1 to source breakdown
voltage
V(BR)G1SS +6
Gate2 to source breakdown
voltage
V(BR)G2SS +6
Gate1 to source cutoff current IG1SS
Gate2 to source cutoff current IG2SS
Gate1 to source cutoff voltage VG1S(off)
Gate2 to source cutoff voltage VG2S(off)
Drain current
I D(op)
0.5
0.5
13
Forward transfer admittance |yfs|
21
Input capacitance
Output capacitance
Reverse transfer capacitance
Power gain
c iss
c oss
c rss
PG
1.4
1.0
16
Noise figure
NF —
Typ Max Unit Test Conditions
——V
ID = 200µA, VG1S = VG2S = 0
——V
IG1 = +10µA, VG2S = VDS = 0
——V
IG2 = +10µA, VG1S = VDS = 0
— +100 nA
— +100 nA
0.75 1.0 V
0.75 1.0 V
17 21 mA
26 31 mS
1.8 2.2 pF
1.4 1.8 pF
0.02 0.04 pF
21 — dB
1.7 2.5 dB
VG1S = +5V, VG2S = VDS = 0
VG2S = +5V, VG1S = VDS = 0
VDS = 5V, VG2S = 4V, ID = 100µA
VDS = 5V, VG1S = 5V, ID = 100µA
VDS = 5V, VG1 = 5V
VG2S = 4V, RG = 100k
VDS = 5V, VG1 = 5V, VG2S =4V
RG = 100k, f = 1kHz
VDS = 5V, VG1 = 5V
VG2S =4V, RG = 100k
f = 1MHz
VDS = VG1 = 5V, VG2S = 4V
RG = 100k, f = 900MHz
Zi=S11*, Zo=S22*(:PG)
Zi=S11opt (:NF)
2

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