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BAW101 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon Switching Diode - Infineon Technologies AG

भाग संख्या BAW101
समारोह Silicon Switching Diode
मैन्युफैक्चरर्स Infineon Technologies AG 
लोगो Infineon Technologies AG लोगो 
पूर्व दर्शन
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<?=BAW101?> डेटा पत्रक पीडीएफ

BAW101 pdf
BAW101...
Thermal Resistance
Parameter
Junction - soldering point1)
BAW101
Symbol
RthJS
Value
330
Unit
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Breakdown voltage
V(BR)
300 -
-
I(BR) = 100 µA
Unit
V
Reverse current
VR = 250 V
VR = 250 V, TA = 150 °C
IR µA
- - 0.15
- - 50
Forward voltage
IF = 100 mA
VF - - 1.3 V
AC Characteristics
Diode capacitance
VR = 0 V, f = 1 MHz
CT - 6 - pF
Reverse recovery time
IF = 10 mA, IR = 10 mA, measured at IR = 1mA,
RL = 100
trr
- 1 - µs
Test circuit for reverse recovery time
D.U.T.
Oscillograph
ΙF
Pulse generator: tp = 10µs, D = 0.05, tr = 0.6ns,
Ri = 50
Oscillograph: R = 50, tr = 0.35ns, C 1pF
EHN00019
1For calculation of RthJA please refer to Application Note Thermal Resistance
2 2007-04-20

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