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IRFP27N60K डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET(Vdss=600V / Rds(on)typ.=180mohm / Id=27A) - International Rectifier

भाग संख्या IRFP27N60K
समारोह Power MOSFET(Vdss=600V / Rds(on)typ.=180mohm / Id=27A)
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
पूर्व दर्शन
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<?=IRFP27N60K?> डेटा पत्रक पीडीएफ

IRFP27N60K pdf
IRFP27N60K
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
600 ––– ––– V VGS = 0V, ID = 250µA
––– 0.64 ––– V/°C Reference to 25°C, ID = 1mA†
––– 180 220 mVGS = 10V, ID = 16A „
3.0 ––– 5.0 V VDS = VGS, ID = 250µA
––– ––– 50
––– ––– 250
µA VDS = 600V, VGS = 0V
VDS = 480V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100 nA VGS = 30V
––– ––– -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs Forward Transconductance
14 ––– ––– S VDS = 50V, ID = 16A
Qg
Qgs
Qgd
td(on)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
––– ––– 180
ID = 27A
––– ––– 56 nC VDS = 480V
––– ––– 86
VGS = 10V, See Fig. 6 and 13 „
––– 27 –––
VDD = 300V
tr
td(off)
tf
Ciss
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
––– 110 ––– ns ID = 27A
––– 43 –––
RG = 4.3
––– 38 –––
VGS = 10V,See Fig. 10 „
––– 4660 –––
VGS = 0V
Coss Output Capacitance
Crss Reverse Transfer Capacitance
––– 460 –––
VDS = 25V
––– 41 ––– pF ƒ = 1.0MHz, See Fig. 5
Coss
Coss
Coss eff.
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 5490 –––
––– 120 –––
––– 250 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 480V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 480V …
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD
trr
Qrr
IRRM
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse RecoveryCurrent
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 27
A showing the
integral reverse
––– ––– 110
p-n junction diode.
G
D
S
––– ––– 1.5 V TJ = 25°C, IS = 27A, VGS = 0V „
––– 620 920 ns TJ = 25°C, IF = 27A
––– 11 16 µC di/dt = 100A/µs „
––– 36 53 A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
‚ Starting TJ = 25°C, L = 1.4mH, RG = 25,
IAS = 27A, dv/dt = 13V/ns. (See Figure 12a)
ƒ ISD 27A, di/dt 390A/µs, VDD V(BR)DSS,
TJ 150°C.
2
„ Pulse width 300µs; duty cycle 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
www.irf.com

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