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NDT455N डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Field Effect Transistor - Fairchild

भाग संख्या NDT455N
समारोह N-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स Fairchild 
लोगो Fairchild लोगो 
पूर्व दर्शन
1 Page
		
<?=NDT455N?> डेटा पत्रक पीडीएफ

NDT455N pdf
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter
Conditions
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 µA
VDS = 24 V, VGS = 0 V
IGSSF Gate - Body Leakage, Forward
IGSSR Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS= 0 V
VDS = VGS, ID = 250 µA
RDS(ON)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 11.5 A
ID(on) On-State Drain Current
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
tD(on) Turn - On Delay Time
tr Turn - On Rise Time
tD(off) Turn - Off Delay Time
tf Turn - Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VGS = 4.5 V, ID = 10 A
VGS = 10 V , VDS = 5 V
VGS = 4.5 V, VDS = 5 V
VGS = 10 V, ID = 11.5 A
VDS = 15, VGS = 0 V,
f = 1.0 MHz
VDD = 15 V, ID = 1 A,
VGEN = 10 V, RGEN = 6
VDS = 10 V,
ID = 11.5 A, VGS = 10 V
Min Typ Max Units
30
TJ = 55°C
V
1 µA
10 µA
100 nA
-100 nA
TJ = 125°C
TJ = 125°C
1 1.5
3
0.7 0.9 2.2
0.013 0.015
0.019 0.03
0.018 0.02
30
15
26
V
A
S
1220
715
280
pF
pF
pF
11 20 ns
16 30 ns
48 80 ns
40 70 ns
43 61 nC
4 nC
11 nC
NDT455N Rev.F

विन्यास 10 पेज
डाउनलोड[ NDT455N Datasheet.PDF ]


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NDT455NN-Channel Enhancement Mode Field Effect TransistorFairchild
Fairchild


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