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NDT453N डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Field Effect Transistor - Fairchild

भाग संख्या NDT453N
समारोह N-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स Fairchild 
लोगो Fairchild लोगो 
पूर्व दर्शन
1 Page
		
<?=NDT453N?> डेटा पत्रक पीडीएफ

NDT453N pdf
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol Parameter
Conditions
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
Min Typ Max Units
30 V
IDSS Zero Gate Voltage Drain Current
IGSSF Gate - Body Leakage, Forward
IGSSR Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
RDS(ON)
Static Drain-Source On-Resistance
ID(on) On-State Drain Current
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
tD(on) Turn - On Delay Time
tr Turn - On Rise Time
tD(off) Turn - Off Delay Time
tf Turn - Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS= 0 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 8.0 A
VGS = 4.5 V, ID = 6.7 A
VGS = 10 V, VDS = 5 V
VGS = 4.5 V, VDS = 5 V
VDS = 15 V, ID = 8.0 A
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
TJ= 55°C
1 µA
10 µA
100 nA
-100 nA
TJ= 125°C
TJ= 125°C
TJ= 125°C
123V
0.7 1.5 2.2
0.022 0.028
0.03 0.045
0.035 0.042
0.047 0.075
15 A
10
14 S
890 pF
560 pF
190 pF
VDD = 25 V, ID = 1 A,
VGEN = 10 V, RGEN = 6
VDS = 15 V, ID = 8.0 A, VGS = 10 V
10 15 ns
20 35 ns
40 50 ns
35 50 ns
28 35 nC
4.5 nC
9.5 nC
NDT453N Rev. D1

विन्यास 10 पेज
डाउनलोड[ NDT453N Datasheet.PDF ]


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NDT453NN-Channel Enhancement Mode Field Effect TransistorFairchild
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