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NDT451N डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Field Effect Transistor - Fairchild

भाग संख्या NDT451N
समारोह N-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स Fairchild 
लोगो Fairchild लोगो 
पूर्व दर्शन
1 Page
		
<?=NDT451N?> डेटा पत्रक पीडीएफ

NDT451N pdf
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter
Conditions
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 µA
VDS = 24 V, VGS = 0 V
IGSSF Gate - Body Leakage, Forward
IGSSR Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS= 0 V
VDS = VGS, ID = 250 µA
RDS(ON)
Static Drain-Source On-Resistance
VGS = 10 V, ID = 5.5 A
ID(on) On-State Drain Current
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
tD(on) Turn - On Delay Time
tr Turn - On Rise Time
tD(off) Turn - Off Delay Time
tf Turn - Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VGS = 4.5 V, ID = 4.3 A
VGS = 10 V, VDS = 5 V
VGS = 4.5 V, VDS = 5 V
VDS = 10 V, ID = 5.5 A
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
VDD = 15 V, ID = 1.0 A,
VGEN = 10 V, RGEN = 6
VDS = 10 V,
ID = 5.5 A, VGS = 10 V
Min Typ Max Units
30
TJ = 55°C
V
2 µA
20 µA
100 nA
-100 nA
TJ = 125°C
TJ = 125°C
1 1.6 3
0.7 1.2 2.2
0.042 0.05
0.065 0.1
0.064 0.08
18
15
6
V
A
S
730 pF
370 pF
140 pF
20 30 ns
15 25 ns
19 40 ns
10 30 ns
16 25 nC
1.8 3 nC
4.5 7 nC
NDT451N Rev. C2

विन्यास 10 पेज
डाउनलोड[ NDT451N Datasheet.PDF ]


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