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NDS9953A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual P-Channel Enhancement Mode Field Effect Transistor - Fairchild

भाग संख्या NDS9953A
समारोह Dual P-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स Fairchild 
लोगो Fairchild लोगो 
पूर्व दर्शन
1 Page
		
<?=NDS9953A?> डेटा पत्रक पीडीएफ

NDS9953A pdf
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter
Conditions
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
VGS = 0 V, ID = -250 µA
VDS = -24 V, VGS = 0 V
IGSSF Gate - Body Leakage, Forward
IGSSR Gate - Body Leakage, Reverse
ON CHARACTERISTICS (Note 2)
VGS(th)
Gate Threshold Voltage
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS= 0 V
VDS = VGS, ID = -250 µA
RDS(ON)
Static Drain-Source On-Resistance
VGS = -10 V, ID = -1.0 A
VGS = -4.5 V, ID = -0.5 A
ID(on) On-State Drain Current
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 2)
tD(on) Turn - On Delay Time
tr Turn - On Rise Time
tD(off) Turn - Off Delay Time
tf Turn - Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VGS = -10 V, VDS = -5 V
VGS = -4.5 V, VDS = -5 V
VDS = -15 V, ID = -2.9 A
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
VDD = -10 V, ID = -1 A,
VGEN = -10 V, RGEN = 6
VDS = -10 V,
ID = -2.9 A, VGS = -10 V
Min Typ Max Units
-30
TJ = 55°C
V
-2 µA
-25 µA
100 nA
-100 nA
TJ = 125°C
TJ = 125°C
TJ = 125°C
-1
-0.85
-10
-1.5
-1.6
-1.25
0.11
0.15
0.17
0.24
4
-2.8
-2.5
0.13
0.21
0.2
0.32
V
A
S
350 pF
260 pF
100 pF
9 40 ns
21 40 ns
21 90 ns
8 50 ns
10 25 nC
1.6 nC
3.4 nC
NDS9953A.SAM

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डाउनलोड[ NDS9953A Datasheet.PDF ]


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