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NTE312 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Silicon Junction Field Effect Transistor - NTE

भाग संख्या NTE312
समारोह N-Channel Silicon Junction Field Effect Transistor
मैन्युफैक्चरर्स NTE 
लोगो NTE लोगो 
पूर्व दर्शन
1 Page
		
<?=NTE312?> डेटा पत्रक पीडीएफ

NTE312 pdf
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
GateSource Breakdown Voltage V(BR)GSS IG = 1.0µA, VDS = 0
30
V
Gate Reverse Current
IGSS VGS = 20V, VDS = 0
– – –1.0 nA
Gate 1 Leakage Current
IG1SS VG1S = 20V, VDS = 0, TA = +100°C
– –0.5 µA
GateSource Cutoff Voltage
VGS(off) VDS = 15V, ID = 10mA
1.0 – –6.0 V
ON Characteristics
ZeroGate Voltage Drain Current
SmallSignal Characteristics
IDSS VDS = 15V, VGS = 0, Note 1
5.0 15 mA
Forward Transfer Admittance
Input Admittance
|yfs|
Re(yis)
VDS = 15V, VGS = 0, f = 1kHz
100MHz VDS = 15V, VGS = 0
400MHz
4500 7500 µmhos
– – 100 µmhos
– – 1000 µmhos
Output Admittance
Output Conductance
|yos|
Re(yos)
VDS = 15V, VGS = 0, f = 1kHz
100MHz VDS = 15V, VGS = 0
400MHz
– – 50 µmhos
– – 75 µmhos
– – 100 µmhos
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Input Susceptance
Re(yfs)
Ciss
Crss
IM(Yis)
VDS = 15V, VGS = 0, f = 400MHz
VDS = 15V, VGS = 0, f = 1.0MHz
VDS = 15V, VGS = 0, f = 1.0MHz
100MHz VDS = 15V, VGS = 0
400MHz
4000
µmhos
– – 4.5 pF
– – 1.0 pF
– – 3.0 mmho
– – 12.0 mmho
Functional Characteristics
Noise Figure
NF 100MHz VDS = 15V, ID = 5mA,
400MHz RiG = 1k
– – 2.0 dB
– – 4.0 dB
Common Source Power Gain
Gps 100MHz VDS = 15V, ID = 5mA,
400MHz RiG = 1k
18 – – dB
10 – – dB
Output Susceptance
IM(Yos) 100MHz VDS = 15V, VGS = 0
400MHz
– – 1000 µmhos
– – 4000 µmhos
Note 1. tp = 100ms, Duty Cycle = 10%.

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डाउनलोड[ NTE312 Datasheet.PDF ]


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