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NTE3096 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Optoisolator Low LED Drive NPN Transistor Output - NTE

भाग संख्या NTE3096
समारोह Optoisolator Low LED Drive NPN Transistor Output
मैन्युफैक्चरर्स NTE 
लोगो NTE लोगो 
पूर्व दर्शन
1 Page
		
<?=NTE3096?> डेटा पत्रक पीडीएफ

NTE3096 pdf
Electrical Characteristics: (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
Infrared Emitting Diode
Forward Voltage
VF IF = 1mA, TA = 0° to +70°C
Reverse Leakage Current
IR VR = 6V
Capacitance
CJ V = 0, f = 1MHZ
Phototransistor (IF = 0 unless otherwise specified)
CollectorEmitter Breakdown Voltage V(BR)CEO IC = 1mA
CollectorBase Breakdown Voltage V(BR)CBO IC = 100µA
EmitterBase Breakdown Voltage
V(BR)EBO IE = 100µA
CollectorEmitter Dark Current
ICEO VCE = 5V, Base Open
VCE = 30V, Base Open, TA = +70°C
CollectorBase Dark Current
ICBO VCB = 5V, Emitter Open
Coupled Characteristics
DC Current Transfer Ratio
CollectorEmitter Saturation Voltage
Isolation Resistance
Isolation Surge Voltage
Isolation Capacitance
Switching Characteristics
IC/IF
VCE(sat)
R(IO)
VISO
C(IO)
IF = 1mA, VCE = 5V
TA = 0° to +70°C
IF = 1mA, IC = 100µA
V(IO) = 500VDC, Note 1
60Hz, Peak AC, 5sec, Note 1
V(IO) = 0, f = 1MHZ
TurnOn Time
TurnOff Time
ton VCE = 10V, V, RL = 100
toff
Min Typ Max Unit
0.7 1.1 1.4
0.05 10
150
V
µA
pf
30 – – V
70 – – V
7 ––V
1.0 25 nA
– – 50 µA
– – 10 nA
50 – – %
30 – – %
– – 0.5 V
1011 – –
7500 – – V
1.3 2.5 pF
– – 20 µs
– – 20 µs
Note 1. For this test, LED Pin1 and Pin2 are common and phototransistor Pin4, Pin5, and Pin6
are common.
654
Pin Connection Diagram
1 23
Anode 1
Cathode 2
N.C. 3
6 Base
.070 (1.78) Max
5 Collector
4 Emitter .200 (5.08)
Max
.350 (8.89)
Max
.260
(6.6)
Max
.350
(8.89)
Max
.300 (7.62)
.085 (2.16) Max
.100 (2.54)

विन्यास 2 पेज
डाउनलोड[ NTE3096 Datasheet.PDF ]


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