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NTE126 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Germanium Mesa Transistor / PNP / for High-Speed Switching Applications - NTE

भाग संख्या NTE126
समारोह Germanium Mesa Transistor / PNP / for High-Speed Switching Applications
मैन्युफैक्चरर्स NTE 
लोगो NTE लोगो 
पूर्व दर्शन
1 Page
		
<?=NTE126?> डेटा पत्रक पीडीएफ

NTE126 pdf
Electrical Characteristics (Contd): (TA = 25°C)
Parameter
BaseEmitter Saturation Voltage
(IC = 10mAdc, IB = 1mAdc)
(IC = 50mAdc, IB = 5mAdc)
(IC = 100mAdc, IB = 10mAdc)
CurrentGainBandwidth Product
(IE = 20mAdc, VCB = 1.0Vdc, f = 100MHz)
Output Capacitance
(VCB = 10Vdc, IE = 0, f = 1MHz)
Emitter Transition Capacitance
(VEB = 1Vdc)
TurnOn Time
(IC = 10mAdc, IB1 = 5mAdc, VBE(off) = 1.25Vdc)
(IC = 100mAdc, IB1 = 5mAdc, VBE(off) = 1.25Vdc)
TurnOff Time
(IC = 10mAdc, IB1 = 1mAdc, IB2 = 0.25mAdc)
(IC = 100mAdc, IB1 = 5mAdc, IB2 = 1.25mAdc)
Total Control Charge
(IC = 10mAdc, IB = 1mAdc)
(IC = 100mAdc, IB = 5mAdc)
Symbol
VBE(sat)
fT
Cob
CTe
ton
toff
QT
Min
0.30
0.40
0.40
300
Max
0.50
0.75
1.00
4.0
3.5
50
50
85
85
80
125
Unit
Vdc
MHz
pF
pF
ns
ns
pC
.210
(5.33)
Max
.500
(12.7)
Min
.230 (5.84) Dia Max
.195 (4.95) Dia Max
Emitter
.018 (0.45)
Base
Collector
45°
.041 (1.05)

विन्यास 2 पेज
डाउनलोड[ NTE126 Datasheet.PDF ]


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