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NTE124 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon NPN Transistor High Voltage Power Output - NTE

भाग संख्या NTE124
समारोह Silicon NPN Transistor High Voltage Power Output
मैन्युफैक्चरर्स NTE 
लोगो NTE लोगो 
पूर्व दर्शन
1 Page
		
<?=NTE124?> डेटा पत्रक पीडीएफ

NTE124 pdf
Electrical Charactersitics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
CollectorEmitter Sustaining Voltage
CollectorEmitter Cutoff Current
CollectorBase Cutoff Current
Collector Cutoff Current
EmitterBase Cutoff Current
ON Characteristics (Note 1)
VCEO(sus) IC = 5mA, IB = 0, Note 1
ICEO VCE = 200V, IB = 0
ICBO VCB = 325V, IE = 0
ICEV VCE = 300V, VEB(off) = 1.5V
VCE = 200V, VEB(off) = 1.5V,
TC = +100°C
IEBO VEB = 6V
DC Current Gain
CollectorEmitter Saturation Voltage
BaseEmitter ONVoltage
Small–Signal Characteristics
hFE
VCE(sat)
VBE(on)
IC = 50mA, VCE = 10V
IC = 100mA, VCE = 10V
IC = 250mA, VCE = 10V
IC = 250mA, IB = 25mA
IC = 100mA, VCE = 10V
CurrentGain Bandwidth Product
fT IC = 100mA, VCE = 10V,
f = 10MHz, Note 2
Output Capacitance
SmallSignal Current Gain
Cob VCB = 100V, IE = 0, f = 100kHz
hfe IC = 100mA, VCE = 20V, f = 1kHz
Min Typ Max Unit
300 – – V
– – 0.25 mA
– – 0.1 mA
– – 0.5 mA
– – 1.0 mA
– – 0.1 mA
30 – –
40 200
25 – –
– – 2.5 V
– – 1.0 V
10 – – MHz
– – 20 pF
35 – –
Note 1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
Note 2. fT = |hfe| D frequency
.062 (1.57)
.485 (12.3)
Dia
.295 (7.5)
.031 (0.78) Dia
.360 (9.14)
Min
.960 (24.3)
Base
.580 (14.7)
.147 (3.75) Dia
(2 Places)
.145 (3.7) R Max
.200
(5.08)
Collector/Case
Emitter

विन्यास 2 पेज
डाउनलोड[ NTE124 Datasheet.PDF ]


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