DataSheet.in

NEZ1011-2E डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 2W X / Ku-BAND POWER GaAs MESFET - NEC

भाग संख्या NEZ1011-2E
समारोह 2W X / Ku-BAND POWER GaAs MESFET
मैन्युफैक्चरर्स NEC 
लोगो NEC लोगो 
पूर्व दर्शन
1 Page
		
<?=NEZ1011-2E?> डेटा पत्रक पीडीएफ

NEZ1011-2E pdf
NEZ1011-2E, NEZ1414-2E
RECOMMENDED OPERATING LIMITS
Characteristics
Drain to Source Voltage
Gain Compression
Channel Temperature
Gate ResistanceNote
Symbol
VDS
Gcomp
Tch
Rg
Test Condition
MIN.
9.0
200
Note Rg is the series resistance between the gate supply and the FET gate.
[NEZ1011-2E]
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics
Symbol
Test Conditions
Saturated Drain Current
IDSS VDS = 1.5 V, VGS = 0 V
Pinch-off Voltage
Vp VDS = 2.5 V, IDS = 10 mA
Gate to Drain Breakdown Voltage BVGD IGD = 10 mA
Thermal Resistance
Rth Channel to Case
Linear Gain
Output Power at 1 dB Gain Comp.
Drain Current at 1 dB Gain Comp.
GL
Po (1 dB)
IDS (1 dB)
f = 10.7, 11.2, 11.7 GHz
VDS = 9.0 V
IDS = 0.7 A (RF OFF)
Rg = 1 k
Power Added Efficiency at 1 dB η add (1 dB)
Gain Compression Point
3rd Order Intermodulation
Distortion
IM3 Pout = +27.5 dBm (2 tone)
MIN.
0.7
–2.5
8.0
33.0
[NEZ1414-2E]
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics
Symbol
Test Conditions
Saturated Drain Current
IDSS VDS = 1.5 V, VGS = 0 V
Pinch-off Voltage
Vp VDS = 2.5 V, IDS = 10 mA
Gate to Drain Breakdown Voltage BVGD IGD = 10 mA
Thermal Resistance
Rth Channel to Case
Linear Gain
Output Power at 1 dB Gain Comp.
Drain Current at 1 dB Gain Comp.
Power Added Efficiency at 1 dB
Gain Compression Point
GL
Po (1 dB)
IDS (1 dB)
η add (1 dB)
f = 14.0 to 14.5 GHz
VDS = 9.0 V
IDS = 0.7 A (RF OFF)
Rg = 1 k
MIN.
0.7
–3.0
7.0
33.0
TYP.
9.0
1000
TYP.
1.6
–1.3
15
5.5
8.5
34.0
0.8
30
–40
TYP.
1.6
–1.3
15
5.5
7.5
34.0
0.8
30
MAX.
9.0
3
+130
1000
Unit
V
dB
°C
MAX.
2.5
–0.5
7.0
1.0
Unit
A
V
V
°C/W
dB
dBm
A
%
dBc
MAX.
3.0
–0.5
7.0
1.0
Unit
A
V
V
°C/W
dB
dBm
A
%
2

विन्यास 12 पेज
डाउनलोड[ NEZ1011-2E Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
NEZ1011-2E2W X / Ku-BAND POWER GaAs MESFETNEC
NEC


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English