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M29W800AT डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 8 Mbit 1Mb x8 or 512Kb x16 / Boot Block Low Voltage Single Supply Flash Memory - ST Microelectronics

भाग संख्या M29W800AT
समारोह 8 Mbit 1Mb x8 or 512Kb x16 / Boot Block Low Voltage Single Supply Flash Memory
मैन्युफैक्चरर्स ST Microelectronics 
लोगो ST Microelectronics लोगो 
पूर्व दर्शन
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<?=M29W800AT?> डेटा पत्रक पीडीएफ

M29W800AT pdf
M29W800AT, M29W800AB
Figure 2. TSOP Connections
A15 1
48 A16
A14 BYTE
A13 VSS
A12 DQ15A–1
A11 DQ7
A10 DQ14
A9 DQ6
A8 DQ13
NC DQ5
NC DQ12
W DQ4
RP 12 M29W800T 37 VCC
NC 13 M29W800B 36 DQ11
NC DQ3
RB DQ10
A18 DQ2
A17 DQ9
A7 DQ1
A6 DQ8
A5 DQ0
A4 G
A3 VSS
A2 E
A1 24
25 A0
AI02179
Table 1. Signal Names
A0-A18
Address Inputs
DQ0-DQ7 Data Input/Outputs, Command Inputs
DQ8-DQ14 Data Input/Outputs
DQ15A–1
Data Input/Output or Address Input
E Chip Enable
G Output Enable
W Write Enable
RP Reset/Block Temporary Unprotect
RB Ready/Busy Output
BYTE
Byte/Word Organization
VCC Supply Voltage
VSS Ground
NC Not Connected Internally
DU Don’t Use as Internally Connected
2/33
Figure 3. SO Connections
RB
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
E
VSS
G
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
1 44
2 43
3 42
4 41
5 40
6 39
7 38
8 37
9 36
10 35
11 M29W800T 34
12 M29W800B 33
13 32
14 31
15 30
16 29
17 28
18 27
19 26
20 25
21 24
22 23
AI02181
RP
W
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE
VSS
DQ15A–1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DESCRIPTION
The M29W800A is a non-volatile memory that may
be erased electrically at the block or chip level and
programmed in-system on a Byte-by-Byte or
Word-by-Word basis using only a single 2.7V to
3.6V VCC supply. For Program and Erase opera-
tions the necessary high voltages are generated
internally. The device can also be programmed in
standard programmers.
The array matrix organisation allows each block to
be erased and reprogrammed without affecting
other blocks. Blocks can be protected against pro-
graming and erase on programming equipment,
and temporarily unprotected to make changes in
the application. Each block can be programmed
and erased over 100,000 cycles.
Instructions for Read/Reset, Auto Select for read-
ing the Electronic Signature or Block Protection
status, Programming, Block and Chip Erase,
Erase Suspend and Resume are written to the de-
vice in cycles of commands to a Command Inter-
face using standard microprocessor write timings.
The device is offered in TSOP48 (12 x 20mm),
SO44 and LFBGA48 0.8 mm ball pitch packages.

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M29W800AB8 Mbit 1Mb x8 or 512Kb x16 / Boot Block Low Voltage Single Supply Flash MemoryST Microelectronics
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M29W800AT8 Mbit 1Mb x8 or 512Kb x16 / Boot Block Low Voltage Single Supply Flash MemoryST Microelectronics
ST Microelectronics


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