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UPA1890 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N- AND P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING - NEC

भाग संख्या UPA1890
समारोह N- AND P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
मैन्युफैक्चरर्स NEC 
लोगो NEC लोगो 
पूर्व दर्शन
1 Page
		
<?=UPA1890?> डेटा पत्रक पीडीएफ

UPA1890 pdf
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
A) N-Channel
CHARACTERISTICS
Drain Cut-off Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
TEST CONDITIONS
IDSS VDS = 30 V, VGS = 0 V
IGSS VGS = ±16 V, VDS = 0 V
VGS(off) VDS = 10 V, ID = 1 mA
| yfs | VDS = 10 V, ID = 3.0 A
RDS(on)1 VGS = 10 V, ID = 3.0 A
RDS(on)2 VGS = 4.5 V, ID = 3.0 A
RDS(on)3 VGS = 4.0 V, ID = 3.0 A
Ciss VDS = 10 V
Coss
VGS = 0 V
Crss f = 1 MHz
td(on)
VDD = 15 V
tr ID = 3.0 A
td(off)
VGS(on) = 10 V
tf RG = 10
QG VDD = 24 V
QGS ID = 6.0 A
QGD
VGS = 10 V
VF(S-D) IF = 6.0 A, VGS = 0 V
trr IF = 6.0 A, VGS = 0 V
Qrr di/dt = 100 A / µs
µPA1890
MIN. TYP. MAX. UNIT
–10 µA
±10 µA
1.5 1.8 2.5 V
3 7.6
S
18 27 m
24 37 m
27 47 m
748 pF
227 pF
107 pF
20 ns
80 ns
48 ns
30 ns
14 nC
1.9 nC
3.8 nC
0.82 V
31 ns
32 nC
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1µs
Duty Cycle 1 %
RL VGS
VGS
Wave Form
10 %
0
VGS(on) 90 %
VDD
ID 90 %
ID 0 10 %
Wave Form
ID
90 %
10 %
td(on) tr td(off) tf
ton toff
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet G14762EJ1V0DS00

विन्यास 12 पेज
डाउनलोड[ UPA1890 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
UPA1890N- AND P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHINGNEC
NEC


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