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UPA1850 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING - NEC

भाग संख्या UPA1850
समारोह P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
मैन्युफैक्चरर्स NEC 
लोगो NEC लोगो 
पूर्व दर्शन
1 Page
		
<?=UPA1850?> डेटा पत्रक पीडीएफ

UPA1850 pdf
µ PA1850
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Drain Cut-off Current
IDSS VDS = –12 V, VGS = 0 V
Gate Leakage Current
5 Gate to Source Cut-off Voltage
5 Forward Transfer Admittance
IGSS
VGS(off)
| yfs |
VGS = # 10 V, VDS = 0 V
VDS = –10 V, ID = –1 mA
VDS = –10 V, ID = –1.5 A
Drain to Source On-state Resistance
RDS(on)1 VGS = –4.5 V, ID = –1.5 A
RDS(on)2 VGS = –4.0 V, ID = –1.5 A
RDS(on)3 VGS = –2.5 V, ID = –1.5 A
Input Capacitance
Ciss VDS = –10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = –10 V
Rise Time
tr ID = –1.5 A
Turn-off Delay Time
td(off)
VGS(on) = –4.0 V
Fall Time
tf RG = 10
Total Gate Charge
QG VDD = –10 V
Gate to Source Charge
QGS ID = –2.5 A
Gate to Drain Charge
QGD VGS = –4.0 V
Diode Forward Voltage
5 Reverse Recovery Time
5 Reverse Recovery Charge
VF(S-D)
trr
Qrr
IF = 2.5 A, VGS = 0 V
IF = 2.5 A, VGS = 0 V
di/dt = 10 A / µs
MIN. TYP. MAX. UNIT
–10 µA
# 10 µA
–0.5 –1.0 –1.5 V
2.0 5.0
S
80 115 m
85 130 m
127 200 m
260 pF
300 pF
45 pF
120 ns
420 ns
520 ns
430 ns
12 nC
2 nC
5 nC
0.80 V
750 ns
950 nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
RG
PG.
VGS ()
0
τ
τ = 1µs
Duty Cycle 1 %
RL VGS ()
VGS
Wave Form
10 %
0
VGS(on) 90 %
VDD
ID ()
90 %
ID 0 10 %
Wave Form
ID
90 %
10 %
td(on) tr td(off) tf
ton toff
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D11818EJ2V0DS00

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डाउनलोड[ UPA1850 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
UPA1850P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHINGNEC
NEC
UPA1851P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHINGNEC
NEC


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