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UPA1814 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING - NEC

भाग संख्या UPA1814
समारोह P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
मैन्युफैक्चरर्स NEC 
लोगो NEC लोगो 
पूर्व दर्शन
1 Page
		
<?=UPA1814?> डेटा पत्रक पीडीएफ

UPA1814 pdf
5 ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = –30 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±20 V, VDS = 0 V
Gate Cut-off Voltage
VGS(off) VDS = –10 V, ID = –1 mA
Forward Transfer Admittance
| yfs | VDS = –10 V, ID = –3.5 A
Drain to Source On-state Resistance
RDS(on)1 VGS = –10 V, ID = –3.5 A
RDS(on)2 VGS = –4.5 V, ID = –3.5 A
RDS(on)3 VGS = –4.0 V, ID = –3.5 A
Input Capacitance
Ciss VDS = –10 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = –15 V
Rise Time
tr ID = –3.5 A
Turn-off Delay Time
td(off)
VGS(on) = –10 V
Fall Time
tf RG = 10
Total Gate Charge
QG VDS = –24 V
Gate to Source Charge
QGS ID = –7.0 A
Gate to Drain Charge
QGD
VGS = –10 V
Diode Forward Voltage
VF(S-D) IF = 7.0 A, VGS = 0 V
µ PA1814
MIN. TYP. MAX. UNIT
–10 µA
±10 µA
–1.0 –1.7 –2.5 V
3 14
S
12 16 m
18 24 m
20 27 m
2180
pF
658 pF
303 pF
30 ns
140 ns
97 ns
86 ns
38 nC
5.9 nC
8.5 nC
0.79 V
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
RG
PG. RG = 10
VGS
0
τ
τ = 1µ s
Duty Cycle 1 %
RL
VDD
VGS
VGS
Wave Form
10 %
0
VGS(on)
ID 90 %
ID
Wave Form
0 10 %
td(on)
ID
tr td(off)
90 %
90 %
10 %
tf
ton toff
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D13804EJ1V0DS00

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डाउनलोड[ UPA1814 Datasheet.PDF ]


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