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UPA1763 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE - NEC

भाग संख्या UPA1763
समारोह SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE
मैन्युफैक्चरर्स NEC 
लोगो NEC लोगो 
पूर्व दर्शन
1 Page
		
<?=UPA1763?> डेटा पत्रक पीडीएफ

UPA1763 pdf
µPA1763
5 ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Drain to Source On-state Resistance
RDS(on)1 VGS = 10 V, ID = 2.3 A
37.0 47.0 m
RDS(on)2 VGS = 4.5 V, ID = 2.3 A
45.0 57.0 m
RDS(on)3 VGS = 4.0 V, ID = 2.3 A
49.0 66.0 m
Gate to Source Cut-off Voltage
VGS(off) VDS = 10 V, ID = 1 mA
1.5 2.0 2.5 V
Forward Transfer Admittance
| yfs | VDS = 10 V, ID = 2.3 A
3.0 6.0
S
Drain Leakage Current
IDSS VDS = 60 V, VGS = 0 V
10 µA
Gate to Source Leakage Current
IGSS VGS = ±16 V, VDS = 0 V
±10 µA
Input Capacitance
Ciss VDS = 10 V
870 pF
Output Capacitance
Coss
VGS = 0 V
150 pF
Reverse Transfer Capacitance
Crss f = 1 MHz
80 pF
Turn-on Delay Time
td(on)
ID = 2.3 A
11 ns
Rise Time
tr VGS(on) = 10 V
40 ns
Turn-off Delay Time
td(off)
VDD = 30 V
50 ns
Fall Time
tf RG = 10
12 ns
Total Gate Charge
QG ID = 4.5 A
20 nC
Gate to Source Charge
QGS
VDD = 48 V
3 nC
Gate to Drain Charge
QGD
VGS = 10 V
5 nC
Body Diode Forward Voltage
VF(S-D) IF = 4.5 A, VGS = 0 V
0.80 V
Reverse Recovery Time
trr IF = 4.5 A, VGS = 0 V
30 ns
Reverse Recovery Charge
Qrr di/dt = 100 A/µs
40 nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
ID
VDD
IAS
BVDSS
VDS
Starting Tch
5 TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
PG.
RG
RG = 10
VGS
0
τ
τ = 1 µs
Duty Cycle 1 %
RL
VDD
VGS
VGS
Wave Form
10 %
0
ID
ID
Wave Form
0 10 %
VGS(on)
90 %
ID
90 %
90 %
10 %
td(on)
tr td(off)
tf
ton toff
2 Data Sheet G14056EJ1V0DS00

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