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UP04315 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon NPN epitaxial planar type Silicon PNP epitaxial planar type - Panasonic Semiconductor

भाग संख्या UP04315
समारोह Silicon NPN epitaxial planar type Silicon PNP epitaxial planar type
मैन्युफैक्चरर्स Panasonic Semiconductor 
लोगो Panasonic Semiconductor लोगो 
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UP04315 pdf
UP04315
Electrical Characteristics (continued) Ta = 25°C ± 3°C
Tr2
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0
50
V
Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 50 V
Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, IE = 0
0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0
0.5 µA
Emitter-base cutoff current (Collector open) IEBO VEB = −6 V, IC = 0
0.01 mA
Forward current transfer ratio
hFE VCE = −10 V, IC = −5 mA
160 460
Collector-emitter saturation voltage
VCE(sat) IC = −10 mA, IB = − 0.3 mA
0.25 V
Output voltage high level
VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ −4.9
V
Output voltage low level
VOL VCC = −5 V, VB = −2.5 V, RL = 1 k
0.2 V
Input resistance
R1
30% 10 +30% k
Transition frequency
fT VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
PT Ta
140
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140
Ambient temperature Ta (°C)
Characteristics charts of Tr1
IC VCE
140
Ta = 25°C
0.9 mA IB = 1.0 mA
0.8 mA
120 0.7 mA
0.6 mA
0.5 mA
100 0.4 mA
0.3 mA
80
0.2 mA
60
40 0.1 mA
20
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
VCE(sat) IC
1
IC / IB = 10
Ta = 75°C
0.1
25°C
25˚C
0.01
1
10 100 1 000
Collector current IC (mA)
hFE IC
450
400 Ta = 75°C
VCE = 10 V
350 25°C
300
250 25°C
200
150
100
50
0
1 10 100 1 000
Collector current IC (mA)
2 SJJ00268BED

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