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UN611F डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon PNP epitaxial planer transistor - Panasonic Semiconductor

भाग संख्या UN611F
समारोह Silicon PNP epitaxial planer transistor
मैन्युफैक्चरर्स Panasonic Semiconductor 
लोगो Panasonic Semiconductor लोगो 
पूर्व दर्शन
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<?=UN611F?> डेटा पत्रक पीडीएफ

UN611F pdf
UN6111/6112/6113/6114/6115/6116/6117/
Transistors with built-in Resistor 6118/6119/6110/611D/611E/611F/611H/611L
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min
Collector cutoff current
UN6111
ICBO VCB = –50V, IE = 0
ICEO VCE = –50V, IB = 0
UN6112/6114/611E/611D
Emitter
cutoff
current
UN6113
UN6115/6116/6117/6110
UN611F/611H
IEBO
VEB = –6V, IC = 0
UN6119
UN6118/611L
Collector to base voltage
Collector to emitter voltage
UN6111
VCBO
VCEO
IC = –10µA, IE = 0
IC = –2mA, IB = 0
–50
–50
35
Forward
current
transfer
ratio
UN6112/611E
UN6113/6114
hFE
UN6115*/6116*/6117*/6110*
UN611F/611D/6119/611H
VCE = –10V, IC = –5mA
60
80
160
30
UN6118/611L
20
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
VCE(sat)
VOH
UN6113
VOL
UN611D
UN611E
Transition frequency
UN6111/6114/6115
fT
IC = –10mA, IB = – 0.3mA
VCC = –5V, VB = – 0.5V, RL = 1k
VCC = –5V, VB = –2.5V, RL = 1k
VCC = –5V, VB = –3.5V, RL = 1k
VCC = –5V, VB = –10V, RL = 1k
VCC = –5V, VB = –6V, RL = 1k
VCB = –10V, IE = 1mA, f = 200MHz
–4.9
UN6112/6117
Input
resis-
tance
UN6113/6110/611D/611E
UN6116/611F/611L
UN6118
R1
(–30%)
UN6119
UN611H
UN6111/6112/6113/611L
0.8
UN6114
0.17
Resis-
tance
ratio
UN6118/6119
UN611D
UN611E
R1/R2
0.08
3.7
1.7
UN611F
0.37
UN611H
0.17
typ max Unit
– 0.1 µA
– 0.5 µA
– 0.5
– 0.2
– 0.1
– 0.01 mA
–1.0
–1.5
–2.0
V
V
460
– 0.25 V
V
– 0.2
– 0.2
– 0.2
V
– 0.2
80 MHz
10
22
47
4.7 (+30%) k
0.51
1
2.2
1.0 1.2
0.21 0.25
0.1 0.12
4.7 5.7
2.14 2.6
0.47 0.57
0.22 0.27
* hFE rank classification (UN6115/6116/6117/6110)
Rank
Q
R
S
hFE
160 to 260
210 to 340
290 to 460
2

विन्यास 13 पेज
डाउनलोड[ UN611F Datasheet.PDF ]


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