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UN412Y डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Silicon PNP epitaxial planer transistor - Panasonic Semiconductor

भाग संख्या UN412Y
समारोह Silicon PNP epitaxial planer transistor
मैन्युफैक्चरर्स Panasonic Semiconductor 
लोगो Panasonic Semiconductor लोगो 
पूर्व दर्शन
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<?=UN412Y?> डेटा पत्रक पीडीएफ

UN412Y pdf
Transistors with built-in Resistor
UN4121/4122/4123/4124/412X/412Y
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min
Collector cutoff current
UN412X
Collector cutoff current
UN412X
Emitter
cutoff
current
UN4121
UN4122/412X/412Y
UN4123/4124
ICBO
ICBO
ICEO
ICEO
IEBO
VCB = –50V, IE = 0
VCB = –50V, IE = 0
VCE = –50V, IB = 0
VCE = –50V, IB = 0
VEB = –6V, IC = 0
Collector to base voltage
Collector to emitter voltage
Forward
current
transfer
ratio
UN4121
UN4122/412Y
UN4123/4124
UN412X
VCBO
VCEO
IC = –10µA, IE = 0
IC = –2mA, IB = 0
hFE VCE = –10V, IC = –100mA
–50
–50
40
50
60
20
Collector to emitter saturation voltage
UN412X
UN412Y
Output voltage high level
Output voltage low level
Transition frequency
UN4121/4124
VCE(sat)
VCE(sat)
VCE(sat)
VOH
VOL
fT
IC = –100mA, IB = –5mA
IC = –10mA, IB = – 0.3mA
IC = –50mA, IB = –5mA
VCC = –5V, VB = – 0.5V, RL = 500
VCC = –5V, VB = –3.5V, RL = 500
VCB = –10V, IE = 50mA, f = 200MHz
–4.9
Input
resis-
tance
UN4122
UN4123
UN412X
R1
(–30%)
UN412Y
Resistance ratio
0.8
UN4124
UN412X
R1/R2
0.17
0.043
UN412Y
typ max
–1
– 0.1
–1
– 0.5
–5
–2
–1
– 0.25
– 0.25
– 0.15
80
2.2
4.7
10
0.27
3.1
1.0
0.22
0.054
0.67
– 0.2
(+30%)
1.2
0.27
0.065
Unit
µA
µA
mA
V
V
V
V
V
MHz
k
Common characteristics chart
PT — Ta
400
300
200
100
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
2

विन्यास 6 पेज
डाउनलोड[ UN412Y Datasheet.PDF ]


शेयर लिंक


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