DataSheet.in

Q62702-C944 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - PNP Silicon Darlington Transistor (High current gain High collector current) - Siemens Semiconductor Group

भाग संख्या Q62702-C944
समारोह PNP Silicon Darlington Transistor (High current gain High collector current)
मैन्युफैक्चरर्स Siemens Semiconductor Group 
लोगो Siemens Semiconductor Group लोगो 
पूर्व दर्शन
1 Page
		
<?=Q62702-C944?> डेटा पत्रक पीडीएफ

Q62702-C944 pdf
BC 516
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA
Collector-base breakdown voltage
IC = 100 µA
Emitter-base breakdown voltage
IE = 10 µA
Collector cutoff current
VCB = 30 V
VCB = 30 V, TA = 150 ˚C
Emitter cutoff current
VEB = 4 V
DC current gain
IC = 20 mA; VCE = 2 V
Collector-emitter saturation voltage1)
IC = 100 mA; IB = 0.1 mA
Base-emitter voltage1)
IC = 10 mA; VCE = 5 V
AC characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 20 MHz
Output capacitance
VCB = 10 V, f = 1 MHz
Symbol
Values
Unit
min. typ. max.
V(BR)CE0 30
V(BR)CB0 40
V(BR)EB0 10
ICB0
––
––
IEB0 – –
hFE 30 000 –
VCEsat
VBE – –
–V
100 nA
10 µA
100 µA
––
1V
1.4
fT
Cobo
200 –
3.5 –
MHz
pF
1) Pulse test: t 300 µs, D 2 %.
Semiconductor Group
2

विन्यास 4 पेज
डाउनलोड[ Q62702-C944 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
Q62702-C944PNP Silicon Darlington Transistor (High current gain High collector current)Siemens Semiconductor Group
Siemens Semiconductor Group


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English